Takagi Shinichi

Researcher Information

Affiliation

Advanced Comprehensive Research Organization (ACRO) Specially Appointed Professor

URL

https://jglobal.jst.go.jp/detail?JGLOBAL_ID=202001014641086727

Research funding number

• 30372402

J-Global ID

• 202001014641086727

Research Activity Information

Published Papers

• Si-waveguide-based optical power monitoring of a 2 × 2 Mach-Zehnder interferometer based on a InGaAsP/Si hybrid MOS optical phase shifter.

  Tomohiro Akazawa; Stéphane Monfray; Frédéric Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics letters 49 (20) 5882 - 5885 2024/10
• Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film

  Zhenhong Liu; Kasidit Toprasertpong; Zuocheng Cai; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics Letters 125 (7) 0003-6951 2024/08
• Symmetric silicon microring resonator optical crossbar array for accelerated inference and training in deep learning

  Rui Tang; Shuhei Ohno; Ken Tanizawa; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Photonics Research 12 (8) 1681 - 1688 2327-9125 2024/08
• Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping

  Zuocheng Cai; Kasidit Toprasertpong; Zhenhong Liu; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 71 (6) 3633 - 3639 0018-9383 2024/06
• Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide.

  Kazuma Taki; Naoki Sekine; Kouhei Watanabe; Yuto Miyatake; Tomohiro Akazawa; Hiroya Sakumoto; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Nature communications 15 (1) 3549 - 3549 2024/05
• Co-design of SLC/MLC FeFET-based highly error-tolerant low-power CiM and strong lottery ticket hypothesis-based algorithm

  Kenshin Yamauchi; Ayumu Yamada; Naoko Misawa; Seong-Kun Cho; Kasidit Toprasertpong; Shinichi Takagi; Chihiro Matsui; Ken Takeuchi

  Japanese Journal of Applied Physics IOP Publishing 63 (4) 04SP06 - 04SP06 0021-4922 2024/03
• Performance improvement in reservoir computing by using HfZrO2 FeFETs through operating voltage optimization

  Shin Yi Min; Kasidit Toprasertpong; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 63 (3) 0021-4922 2024/03
• FeFET Local Multiply and Global Accumulate Voltage-Sensing Computation-In-Memory Circuit Design for Neuromorphic Computing

  Chihiro Matsui; Kasidit Toprasertpong; Shinichi Takagi; Ken Takeuchi

  IEEE Transactions on Very Large Scale Integration (VLSI) Systems Institute of Electrical and Electronics Engineers (IEEE) 32 (3) 468 - 479 1063-8210 2024/03
• Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics 63 (2) 0021-4922 2024/02
• Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

  Hiroya Sakumoto; Taketoshi Nakayama; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics 63 (2) 0021-4922 2024/02
• Add-Drop Microring Resonator Switch with Positive/Negative Phase Tuning Using InGaAsP/Si Hybrid MOS Phase Shifter

  Yosuke Wakita; Rui Tang; Hanzhi Tang; Shuhei Ohno; Tomohiro Akazawa; Yuto Miyatake; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 (12) 4289 - 4295 0733-8724 2024
• Transparent In-Line Optical Power Monitoring Using InP/Si Hybrid Waveguide Phototransistor

  Tomohiro Akazawa; Kei Sumita; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 (12) 4281 - 4288 0733-8724 2024
• Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited)

  Kasidit Toprasertpong; Eishin Nako; Shin Yi Min; Zuocheng Cai; Seong Kun Cho; Rikuo Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Reliability Physics Symposium Proceedings 1541-7026 2024
• Inference and training in deep learning using a symmetric optical crossbar array

  Rui Tang; Shuhei Ohno; Ken Tanizawa; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2024 Optical Fiber Communications Conference and Exhibition, OFC 2024 - Proceedings 2024
• Demonstration of Wake-Up Free 6 nm Ultrathin ZrO-HfO Superlattice Ferroelectric Capacitors with High Endurance Against Fatigue

  Yan Kui Liang; Zhenhong Liu; Zuocheng Cai; Xueyang Han; Huai Ying Huang; Yu Ming Lin; Edward Yi Chang; Chun Hsiung Lin; Mitsuru Takenaka; Kasidit Toprasertpong; Shinichi Takagi

  IEEE Electron Device Letters 45 (8) 1468 - 1471 0741-3106 2024
• Photonic Matrix-Vector Multiplication with Low-Insertion-Loss and Non-Volatile Ge2Sb2Te3S2 Intensity Modulators

  Yuto Miyatake; Rui Tang; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Journal of Lightwave Technology 42 (12) 4347 - 4354 0733-8724 2024
• Global optimization of universal unitary photonic integrated circuits

  Rui Tang; Hanzhi Tang; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IEEE International Conference on Group IV Photonics GFP 1949-2081 2024
• Reservoir Computing Utilizing a Complementary Combination of n- and p-Channel FeFETs

  Rikuo Suzuki; Kasidit Toprasertpong; Ryosho Nakane; Eishin Nako; Mitsuru Takenaka; Shinichi Takagi

  IEEE Electron Device Letters 45 (10) 1768 - 1771 0741-3106 2024
• Electron Mobility Enhancement of (111)-Oriented Extremely Thin Body Ge-on-Insulator nMOSFETs by Flipped Smart-Cut Substrates

  Xueyang Han; Chia Tsong Chen; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 71 (9) 5198 - 5204 0018-9383 2024
• Reservoir computing using nonlinear polarization and charge dynamics of anti-ferroelectric HZO/Si FETs

  Shin Yi Min; Kasidit Toprasertpong; Eishin Nako; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024 37 - 38 2024
• A single-wavelength non-coherent photonic matrix multiplication circuit for optical neural networks

  Rui Tang; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  CLEO: Science and Innovations, CLEO: S and I 2024 in Proceedings CLEO 2024, Part of Conference on Lasers and Electro-Optics 2024
• Inference and training in deep learning using a symmetric optical crossbar array

  Rui Tang; Shuhei Ohno; Ken Tanizawa; Kazuhiro Ikeda; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Fiber Communication Conference in Proceedings Optical Fiber Communication Conference, OFC 2024 2024
• Design of compact and low-loss S-bends by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 31 (26) 43850 - 43863 2023/12
• Design of compact and low-loss S-bends by CMA-ES.

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics express 31 (26) 43850 - 43863 2023/12
• Reservoir Computing System With HZO/Si FeFETs in Parallel Configuration: Experimental Demonstration of Speech Classification

  Eishin Nako; Kasidit Toprasertpong; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 70 (11) 5657 - 5664 0018-9383 2023/11
• Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

  Rui Tang; Kouhei Watanabe; Masahiro Fujita; Hanzhi Tang; Tomohiro Akazawa; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Laser & Photonics Reviews Wiley 17 (11) 1863-8880 2023/10
• Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon-Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion Raman Spectroscopy

  Yuiha Maeda; Ryo Yokogawa; Sho Sugawa; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi; Atsushi Ogura

  ECS Transactions The Electrochemical Society 112 (1) 37 - 43 1938-5862 2023/09
• Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory

  Kasidit Toprasertpong; Chihiro Matsui; Mitsuru Takenaka; Ken Takeuchi; Shinichi Takagi

  Journal of Physics D: Applied Physics IOP Publishing 56 (46) 465103 - 465103 0022-3727 2023/08
• Hole Mobility Boosters of (110)-Oriented Extremely Thin Body SiGe-on- Insulator (SGOI) pMOSFETs

  Chia Tsong Chen; Xueyang Han; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices 70 (7) 3963 - 3969 0018-9383 2023/07
• Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM

  Kei Sumita; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  AIP Advances {AIP} Publishing 13 (5) 2158-3226 2023/05
• Interpretation of mobility universality against effective electric field of Si nMOSFETs based on nonlinear model of surface roughness scattering

  Kei Sumita; Kasidit Toprasertpong; Mitsuru TAKENAKA; Shinichi TAKAGI

  Applied Physics Express {IOP} Publishing 1882-0778 2023/05
• Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge₂Sb₂Te₃S₂

  Yuto Miyatake; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers ({IEEE}) 70 (4) 2106 - 2112 0018-9383 2023/04
• Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al₂O₃/plasma oxidation GeO _x /(111) and (100) n-Ge MOS structures

  Xueyang Han; Chia-Tsong Chen; Mengnan Ke; Ziqiang Zhao; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 62 ({SC}) 0021-4922 2023/03
• Effect of Hf _x Zr_1−x O₂/Ge metal–ferroelectrics–insulator–semiconductor interfaces on polarization reversal behavior

  Koichiro Iwashige; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 62 ({SC}) 0021-4922 2023/03
• Influence of substrate impurity concentration on sub-threshold swing of Si n-channel MOSFETs at cryogenic temperatures down to 4 K

  Min-Soo Kang; Kei Sumita; Hiroshi Oka; Takahiro Mori; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 62 ({SC}) 0021-4922 2023/02
• Accurate evaluation of interface trap density at InAs MOS interfaces by using C-V curves at low temperatures

  Ryohei Yoshizu; Kei Sumita; Kasidit Toprasertpong; Mitsuru TAKENAKA; Shinichi TAKAGI

  Japanese Journal of Applied Physics {IOP} Publishing 0021-4922 2023/01
• Low-power Add-drop Microring Resonator Switch with Positive/negative Phase Tuning using InGaAsP/Si Hybrid MOS Phase Shifter

  Yosuke Wakita; Rui Tang; Hanzhi Tang; Shuhei Ohno; Tomohiro Akazawa; Yuto Miyatake; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings 2023 (34) 322 - 325 2023
• Hafnia-based ferroelectric devices for lower power memory and AI applications

  Shinichi Takagi; Kasidit Toprasertpong; Eishin Nako; Mitsuru Takenaka; Ryosho Nakane

  7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 2023
• HZO Scaling and Fatigue Recovery in FeFET with Low Voltage Operation: Evidence of Transition from Interface Degradation to Ferroelectric Fatigue

  Zuocheng Cai; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2023-June 0743-1562 2023
• Quantitative Understanding of Sub-Threshold Swing of Si MOSFETs at Cryogenic Temperatures Down to 4 K

  Shinichi Takagi; Min Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Hiroshi Oka; Takahiro Mori

  Proceedings of the IEEE Conference on Nanotechnology 2023-July 10 - 14 1944-9399 2023
• Compact Low-loss S-bends Designed by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2023 Conference on Lasers and Electro-Optics, CLEO 2023 2023
• Reservoir Computing Utilizing Ferroelectric-Gate-Insulator FETs and Capacitors

  Shinichi Takagi; Kasidit Toprasertpong; Eishin Nako; Zeyu Wang; Rikuo Suzuki; Shin Yi Min; Mitsuru Takenaka; Ryosho Nakane

  Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023 25 - 28 2023
• Compact Low-loss S-bends Designed by CMA-ES

  Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  CLEO: Science and Innovations, CLEO:S and I 2023 2023
• Scalable Programmable Photonic Integrated Circuits by III-V/Si Hybrid Integration

  Mitsuru Takenaka; Hanzhi Tang; Kouhei Watanabe; Takaya Ochiai; Tomohiro Akazawa; Masahiro Fujita; Chengli Chai; Mingzhi Huang; Yosuke Wakita; Yuto Miyatake; Shuhei Ohno; Kei Sumita; Stephane Monfray; Frederic Boeuf; Makoto Okano; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  Integrated Photonics Research, Silicon and Nanophotonics in Proceedings Advanced Photonics Congress 2023 - Part of Advanced Photonics Congress 2023 2023
• Transparent in-line optical power monitor integrated with MOS Optical Phase Shifter using InP/Si Hybrid Integration

  Tomohiro Akazawa; Kei Sumita; Stéphane Monfray; Frédéric Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings 2023 (34) 29 - 32 2023
• Photonic Tensor Core with Low-insertion-loss, Non-volatile Ge2Sb2Te3S2Intensity Modulators

  Yuto Miyatake; Rui Tang; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Proceedings 2023 (34) 432 - 435 2023
• Formulation of Ground States for 2DEG at Rough Surfaces and Application to Nonlinear Model of Surface Roughness Scattering in nMOSFETs

  Kei Sumita; Min-Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Journal of the Electron Devices Society Institute of Electrical and Electronics Engineers ({IEEE}) 11 216 - 229 2168-6734 2023
• Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths.

  Takaya Ochiai; Tomohiro Akazawa; Yuto Miyatake; Kei Sumita; Shuhei Ohno; Stéphane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Nature communications 13 (1) 7443 - 7443 2022/12
• Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

  Kasidit Toprasertpong; Kento Tahara; Yukinobu Hikosaka; Ko Nakamura; Hitoshi Saito; Mitsuru Takenaka; Shinichi Takagi

  ACS Applied Materials & Interfaces American Chemical Society ({ACS}) 14 (45) 51137 - 51148 1944-8244 2022/11
• Non-volatile compact optical phase shifter based on Ge₂Sb₂Te₅ operating at 2.3 µm

  Yuto Miyatake; Chong Pei Ho; Prakash Pitchappa; Ranjan Singh; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Materials Express Optica Publishing Group 12 (12) 4582 - 4582 2159-3930 2022/11
• On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics A Springer Science and Business Media {LLC} 128 (12) 0947-8396 2022/11
• (Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era

  Shinichi Takagi; Chia-Tsong Chen; Xueyang Han; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 109 (4) 59 - 71 1938-5862 2022/09
• Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuits

  Mitsuru Takenaka; Ziqiang Zhao; Chong Pei Ho; Takumi Fujigaki; Tipat Piyapatarakul; Yuto Miyatake; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  ECS Transactions The Electrochemical Society 109 (4) 47 - 58 1938-5862 2022/09
• Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy

  Ryo Yokogawa; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi; Atsushi Ogura

  ECS Transactions The Electrochemical Society 109 (4) 351 - 357 1938-5862 2022/09
• Two-layer integrated photonic architectures with multiport photodetectors for high-fidelity and energy-efficient matrix multiplications

  Rui Tang; Makoto Okano; Kasidit Toprasertpong; Shinichi Takagi; Dirk Englund; Mitsuru Takenaka

  Optics Express Optica Publishing Group 30 (19) 33940 - 33940 1094-4087 2022/09
• Reservoir computing on a silicon platform with a ferroelectric field-effect transistor

  Kasidit Toprasertpong; Eishin Nako; Zeyu Wang; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  Communications Engineering Springer Science and Business Media {LLC} 1 (1) 2731-3395 2022/08
• Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network

  Shuhei Ohno; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  ACS Photonics American Chemical Society ({ACS}) 9 (8) 2614 - 2622 2330-4022 2022/07
• Modulation bandwidth improvement of III-V/Si hybrid MOS optical modulator by reducing parasitic capacitance

  Hanzhi Tang; Qiang Li; Chong Pei Ho; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express 30 (13) 22848 - 22859 2022/06
• Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

  Naoki Sekine; Kei Sumita; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express Optica Publishing Group 30 (13) 23318 - 23318 1094-4087 2022/06
• Characterization of interface properties of Al₂O₃/n-GaSb and Al₂O₃/InAs/n-GaSb metal-oxide-semiconductor structures

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics IOP Publishing 61 (6) 061010 - 061010 0021-4922 2022/05
• Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley—Robust to Surface Roughness Scattering

  Kei Sumita; Chia-Tsong Chen; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers ({IEEE}) 69 (4) 2115 - 2121 0018-9383 2022/04
• Numerical analysis of optical phase modulator operating at 2 μm wavelength using graphene/III–V hybrid metal-oxide-semiconductor capacitor

  Tipat Piyapatarakul; Hanzhi Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics {IOP} Publishing 61 ({SC}) 0021-4922 2022/02
• Introduction of high tensile strain into Ge-on-Insulator structures by oxidation and annealing at high temperature

  Xueyang Han; Chia-Tsong Chen; Cheol-Min Lim; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 61 ({SC}) 0021-4922 2022/02
• Verification of influence of tail states and interface states on sub-threshold swing of Si n-channel MOSFETs over a temperature range of 4–300 K

  Min-Soo Kang; Kasidit Toprasertpong; Mitsuru Takenaka; Hiroshi Oka; Takahiro Mori; Shinichi Takagi

  Japanese Journal of Applied Physics {IOP} Publishing 61 ({SC}) 0021-4922 2022/02
• Low-capacitance Ultrathin InGaAs Membrane Photodetector on Si Slot Waveguide towards Receiver-less System

  T. Akazawa; D. Wu; K. Sumita; N. Sekine; M. Okano; K. Toprasertpong; S. Takagi; M. Takenaka

  Digest of Technical Papers - Symposium on VLSI Technology 2022-June 411 - 412 0743-1562 2022
• Experimental demonstration of novel scheme of HZO/Si FeFET reservoir computing with parallel data processing for speech recognition

  E. Nako; K. Toprasertpong; R. Nakane; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2022-June 220 - 221 0743-1562 2022
• III-V/Si hybrid integration for scalable optical switching and computing

  Mitsuru Takenaka; Hanzhi Tang; Kouhei Watanabe; Takaya Ochiai; Tomohiro Akazawa; Yuto Miyatake; Shuhei Ohno; Kei Sumita; Stephane Monfray; Frederic Boeuf; Rui Tang; Kasidit Toprasertpong; Shinichi Takagi

  OECC/PSC 2022 - 27th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing 2022 2022
• Extremely-Thin Channel FET Technology for Advanced Logic CMOS

  Shinichi Takagi; Kei Sumita; Chia Tsong Chen; Xueyang Han; Kasidit Toprasertpong; Mitsuru Takenaka

  2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 2022
• Numerical Investigation of High-Speed Surface-Normal Modulator Using InP High-Contrast Grating

  Taichiro Fukui; Kei Sumita; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Takuo Tanemura

  Conference Digest - IEEE International Semiconductor Laser Conference 2022-October 0899-9406 2022
• Crossbar Wiring for III-V/Si MOS Optical Phase Shifters with Diode Selectors

  Hanzhi Tang; Rui Tang; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2022 European Conference on Optical Communication, ECOC 2022 2022
• Write Variation & Reliability Error Compensation by Layer-wise Tunable Retraining of Edge FeFET LM-GA CiM

  Shinsei Yoshikiyo; Naoko Misawa; Kasidit Toprasertpong; Shinichi Takagi; Chihiro Matsui; Ken Takeuchi

  IEICE Transactions on Electronics Institute of Electronics, Information and Communications Engineers (IEICE) 0916-8524 2022
• Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress

  Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Frontiers in Electronics Frontiers Media {SA} 3 2673-5857 2022
• Efficient optical phase modulator based on an III–V metal-oxide-semiconductor structure with a doped graphene transparent electrode

  Tipat Piyapatarakul; Hanzhi Tang; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Japanese Journal of Applied Physics {IOP} Publishing 62 ({SC}) 0021-4922 2022
• Effective Mobility Enhancement Through Asymmetric Strain Channels on Extremely Thin Body (100) GOI pMOSFETs

  Chia-Tsong Chen; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers ({IEEE}) 69 (1) 25 - 30 0018-9383 2022/01
• A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

  Roda Nur; Takashi Tsuchiya; Kasidit Toprasertpong; Kazuya Terabe; Shinichi Takagi; Mitsuru Takenaka

  Nanoscale Royal Society of Chemistry (RSC) 14 (5) 2013 - 2022 2040-3364 2022
• Low-loss Ge waveguide at the 2-µm band on an n-type Ge-on-insulator wafer

  Ziqiang Zhao; Cheol-Min Lim; Chongpei Ho; Kei Sumita; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optical Materials Express Optica Publishing Group 11 (12) 4097 - 4097 2159-3930 2021/11
• (Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications

  Shinichi Takagi; Kasidit Toprasertpong; Kent Tahara; Eishin Nako; Ryosho Nakane; Zeyu Wang; Xuan Luo; Tsung-En Lee; Mitsuru Takenaka

  ECS Meeting Abstracts The Electrochemical Society {MA}2021-02 (30) 909 - 909 2151-2043 2021/10
• (Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications

  Shinichi Takagi; Kasidit Toprasertpong; Kent Tahara; Eishin Nako; Ryosho Nakane; Zeyu Wang; Xuan Luo; Tsung-En Lee; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 104 (4) 17 - 26 1938-5862 2021/10
• Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

  K. Sumita; K. Toprasertpong; M. Takenaka; S. Takagi

  Applied Physics Letters {AIP} Publishing 119 (10) 103501 - 103501 0003-6951 2021/09
• Re-examination of effects of ALD high-k materials on defect reduction in SiGe metal–oxide–semiconductor interfaces

  Tsung-En Lee; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  AIP Advances {AIP} Publishing 11 (8) 085021 - 085021 2158-3226 2021/08
• Energy-Efficient Reliable HZO FeFET Computation-in-Memory with Local Multiply Global Accumulate Array for Source-Follower Charge-Sharing Voltage Sensing

  Chihiro Matsui; Kasidit Toprasertpong; Shinichi Takagi; Ken Takeuchi

  IEEE Symposium on VLSI Circuits, Digest of Technical Papers Institute of Electrical and Electronics Engineers Inc. 2021- 2021/06
• Antiferroelectric properties of ZrO₂ ultra-thin films prepared by atomic layer deposition

  Xuan Luo; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  Applied Physics Letters {AIP} Publishing 118 (23) 232904 - 232904 0003-6951 2021/06
• Monolithic Integration of III-V/Si Hybrid MOS Optical Phase Shifter and InGaAs Membrane Photodetector

  Shuhei Ohno; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2021 Optical Fiber Communications Conference and Exhibition, OFC 2021 - Proceedings Institute of Electrical and Electronics Engineers Inc. 2021/06
• Thermo-optic Mach-Zehnder Interferometer Integrated with Si PN Diode Switch for Bipolar Optical Phase Control

  Hanzhi Tang; Shuhei Ohno; Yuto Miyatake; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2021 Optical Fiber Communications Conference and Exhibition, OFC 2021 - Proceedings Institute of Electrical and Electronics Engineers Inc. 2021/06
• Bilayer Tunneling Field Effect Transistors using Oxide Semiconductor/Group‐IV Semiconductor Hetero‐structures

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  SID Symposium Digest of Technical Papers Wiley 52 (1) 73 - 76 0097-966X 2021/05
• Si Microring Resonator Optical Switch based on Optical Phase Shifter with Ultrathin-InP/Si Hybrid Metal-Oxide-Semiconductor Capacitor

  Shuhei Ohno; Qiang Li; Naoki Sekine; Hanzhi Tang; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Optics Express The Optical Society 1094-4087 2021/05
• Advanced CMOS technologies for ultra-low power logic and AI applications

  Shinichi Takagi; Kasidit Toprascrtpong; Kimihiko Kato; Kei Sumita; Eishin Nako; Ryosho Nakane; Kwang-Won Jo; Mitsuru Takenaka

  2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 Institute of Electrical and Electronics Engineers Inc. 2021/04
• Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates

  M. Mitsuhara; T. Gotow; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi

  Journal of Crystal Growth Elsevier BV 555 125970 - 125970 0022-0248 2021/02
• Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Journal of the Electron Devices Society Institute of Electrical and Electronics Engineers ({IEEE}) 9 612 - 617 2168-6734 2021
• Impacts of Equivalent Oxide Thickness Scaling of TiN/Y2O3 Gate Stacks with Trimethylaluminum Treatment on SiGe MOS Interface Properties

  Tsung-En Lee; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Electron Device Letters Institute of Electrical and Electronics Engineers ({IEEE}) 1 - 1 0741-3106 2021
• Proposal and Experimental Demonstration of Ultrathin-Body (111) InAs-On-Insulator nMOSFETs With L Valley Conduction

  Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers ({IEEE}) 1 - 7 0018-9383 2021
• Si Microring Resonator Switch Based on III-V/Si Hybrid MOS Optical Phase Shifter Using Ultrathin InP Membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Hanzhi Tang; Stephane Monfray; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020 Institute of Electrical and Electronics Engineers Inc. 2020/12
• Demonstration of Classification Task Using Optical Neural Network Based on Si Microring Resonator Crossbar Array

  Shuhei Ohno; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020 Institute of Electrical and Electronics Engineers Inc. 2020/12
• Mid-infrared Non-volatile Compact Optical Phase Shifter Based on Ge Sb Te

  Yuto Miyatake; Chong Pei Ho; Prakash Pitchappa; Ranjan Singh; Kotaro Makino; Junji Tominaga; Noriyuki Miyata; Takashi Nakano; Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 European Conference on Optical Communications, ECOC 2020 Institute of Electrical and Electronics Engineers Inc. 2020/12
• High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

  Roda Nur; Takashi Tsuchiya; Kasidit Toprasertpong; Kazuya Terabe; Shinichi Takagi; Mitsuru Takenaka

  Communications Materials Springer Science and Business Media LLC 1 (1) 2020/12
• Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 28 (24) 35663 - 35673 1094-4087 2020/11
• Reduction of MOS Interface Defects in TiN/Y2O3/Si0.78Ge0.22 Structures by Trimethylaluminum Treatment

  Tsung-En Lee; Mengnan Ke; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (10) 4067 - 4072 0018-9383 2020/10
• Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

  Kasidit Toprasertpong; Kento Tahara; Taichiro Fukui; Zaoyang Lin; Kouhei Watanabe; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 (10) 1588 - 1591 0741-3106 2020/10
• Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits

  Kimihiko Kato; Tetsufumi Tanamoto; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (9) 3876 - 3882 0018-9383 2020/09
• Numerical analyses of optical loss and modulation bandwidth of an InP organic hybrid optical modulator

  Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 28 (20) 29730 - 29739 1094-4087 2020/09
• Efficient Mid-Infrared Germanium Variable Optical Attenuator Fabricated by Spin-on-Glass Doping

  Ziqiang Zhao; Chong Pei Ho; Qiang Li; Zaoyang Lin; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JOURNAL OF LIGHTWAVE TECHNOLOGY 38 (17) 4808 - 4816 0733-8724 2020/09
• Operation of (111) Ge-on-Insulator n-channel MOSFET Fabricated by Smart-Cut Technology (vol 41, pg 985, 2020)

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 (8) 1266 - 1266 0741-3106 2020/08
• Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films

  K. Sumita; J. Takeyasu; K. Toprasertpong; M. Takenaka; S. Takagi

  Journal of Applied Physics {AIP} Publishing 128 (1) 015705 - 015705 0021-8979 2020/07
• Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration

  Kimihiko Kato; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 13 (7) 1882-0778 2020/07
• Operation of (111) Ge-on-Insulator n-Channel MOSFET Fabricated by Smart-Cut Technology

  Cheol-Min Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 41 (7) 985 - 988 0741-3106 2020/07
• Diffusion properties of n-type dopants diffused from spin on glass into Ge

  Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 128 (1) 0021-8979 2020/07
• Proposal and Experimental Demonstration of Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications

  E. Nako; K. Toprasertpong; R. Nakane; Z. Wang; Y. Miyatake; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology Institute of Electrical and Electronics Engineers Inc. 2020- 0743-1562 2020/06
• Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2*1013cm-2

  K. Toprasertpong; Z. -Y. Lin; T. -E. Lee; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology Institute of Electrical and Electronics Engineers Inc. 2020- 0743-1562 2020/06
• Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

  Kasidit Toprasertpong; Kento Tahara; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 116 (24) 0003-6951 2020/06
• Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

  Masafumi Yokoyama; Taketsugu Yamamoto; Dae-Hwan Ahn; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 127 (22) 0021-8979 2020/06
• Active-Passive Integration on III-V-OI Platform using Quantum Well Intermixing

  Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Institute of Electrical and Electronics Engineers Inc. 2020- 1092-8081 2020/05
• Metal-oxide-semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

  Tsung-En Lee; Mengnan Ke; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 127 (18) 0021-8979 2020/05
• Tunable Germanium-on-Insulator Band-Stop Optical Filter Using Thermo-Optic Effect

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS JOURNAL 12 (2) 1943-0655 2020/04
• p-Channel TFET Operation of Bilayer Structures With Type-II Heterotunneling Junction of Oxide- and Group-IV Semiconductors

  Kimihiko Kato; Kwang-Won Jo; Hiroaki Matsui; Hitoshi Tabata; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (4) 1880 - 1886 0018-9383 2020/04
• Computational design of efficient grating couplers using artificial intelligence

  Yuto Miyatake; Naoki Sekine; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 0021-4922 2020/04
• Si microring resonator crossbar arrays for deep learning accelerator

  Shuhei Ohno; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 0021-4922 2020/04
• Accurate evaluation of specific contact resistivity between InAs/Ni-InAs alloy using a multi-sidewall transmission line method

  Kei Sumita; Kimihiko Kato; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 59 0021-4922 2020/04
• Monolithic Germanium PIN Waveguide Photodetector Operating at 2 μm Wavelengths

  Ziqiang Zhao; Chongpei Ho; Qiang Li; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings Institute of Electrical and Electronics Engineers Inc. 2020/03
• Low Parasitic Capacitance III-V/Si Hybrid MOS Optical Modulator toward High-speed Modulation

  Qiang Li; Chong Pei Ho; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings 2020/03
• Taper-Less III-V/Si Hybrid MOS Optical Phase Shifter using Ultrathin InP Membrane

  Shuhei Ohno; Qiang Li; Naoki Sekine; Junichi Fujikata; Masataka Noguchi; Shigeki Takahashi; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

  2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings 2020/03
• Optical Phase Modulators Based on Reverse-Biased III-V/Si Hybrid Metal-Oxide-Semiconductor Capacitors

  Qiang Li; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS TECHNOLOGY LETTERS 32 (6) 345 - 348 1041-1135 2020/03
• Comparison of carrier trap characteristics in different interfacial layers of n-Ge MOS structures

  Ke Mengnan; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2020.1 2650 - 2650 2020/02
• Proposal of a measurement method to discriminate different types of traps in n-Ge MOS gate nsulators

  Ke Mengnan; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2020.1 2649 - 2649 2020/02
• Characteristics of slow traps in Al₂O₃/GeO_x/n-Ge MOS interfaces by plasma oxidation

  Ke Mengnan; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2020.1 2648 - 2648 2020/02
• Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

  Lim, C.-M.; Zhao, Z.; Sumita, K.; Toprasertpong, K.; Takenaka, M.; Takagi, S.

  AIP Advances 10 (1) 2020 [Refereed]
  
• Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al2O3 Gate Stack

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Takahiro Mori; Yukinori Morita; Takashi Matsukawa; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 8 (1) 341 - 345 2168-6734 2020
• III-V/Si hybrid optical modulators based on MOS capacitor

  Mitsuru Takenaka; Qiang Li; Shuhei Ohno; Frederic Boeuf; Kasidit Toprasertpong; Shinichi Takagi

  INTEGRATED PHOTONICS PLATFORMS: FUNDAMENTAL RESEARCH, MANUFACTURING AND APPLICATIONS 11364 0277-786X 2020
• SPICE simulation of 32-kHz crystal-oscillator operation based on Si tunnel FET

  Tetsufumi Tanamoto; Chika Tanaka; Shinichi Takagi

  IEICE ELECTRONICS EXPRESS 17 (6) 1349-2543 2020
• Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation

  K. Toprasertpong; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM Institute of Electrical and Electronics Engineers Inc. 2019- 0163-1918 2019/12
• Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation

  K. W. Jo; C. M. Lim; W. K. Kim; K. Toprasertpong; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2019-December 0163-1918 2019/12 [Refereed]
  
• Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 126 (21) 0021-8979 2019/12
• Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (12) 5060 - 5064 0018-9383 2019/12
• Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

  S.-H. Yoon; K. Kato; C. Yokoyama; D.-H. Ahn; M. Takenaka; S. Takagi

  Journal of Applied Physics AIP Publishing 126 (18) 184501 - 184501 0021-8979 2019/11
• Group IV Based Bi-Layer Tunneling Field Effect Transistor

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 93 (1) 23 - 27 1938-6737 2019/10
• Group IV/oxide semiconductor bi-layer tunneling FET

  Shinichi Takagi; Kimihiko Kato; Mitsuru Takenaka

  2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 Institute of Electrical and Electronics Engineers Inc. 2019/10
• Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers

  Kei Sumita; Jun Takeyasu; Kimihiko Kato; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

  IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 Institute of Electrical and Electronics Engineers Inc. 2019/10
• (Invited) Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits

  Shinichi Takagi; Kimihiko Kato; Dae-Hwan Ahn; Takahiro Gotow; Ryotaro Takaguchi; Tae-Eon Bae; Kasidit Toprasertpong; Mitsuru Takenaka

  ECS Transactions The Electrochemical Society 92 (4) 59 - 69 1938-6737 2019/07
• Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA nassivation

  T. E. Lee; K. Kato; M. Ke; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2019-June T100 - T101 0743-1562 2019/06
• Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks

  T.-E. Lee; K. Kato; M. Ke; K. Toprasertpong; M. Takenaka; S. Takagi

  Microelectronic Engineering Elsevier BV 214 87 - 92 0167-9317 2019/06
• Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 (21) 0021-8979 2019/06
• Mid-infrared tunable Vernier filter on a germanium-on-insulator photonic platform

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  OPTICS LETTERS 44 (11) 2779 - 2782 0146-9592 2019/06
• Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  AIP ADVANCES 9 (5) 2158-3226 2019/05
• ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 (19) 0021-8979 2019/05
• Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFET

  Dae-Hwan Ahn; Sang-Hee Yoon; Kimihiko Kato; Taiichirou Fukui; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (4) 1862 - 1867 0018-9383 2019/04
• Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis

  Kiyoshi Endo; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Thermal properties of III-V on a SiC platform for photonic integrated circuits

  Takaaki Sanjoh; Naoki Sekine; Kimihiko Kato; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature

  Kei Sumita; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Numerical analysis of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelength

  Yoshitaka Taguchi; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators

  Masashi Yamaguchi; Takahiro Gotow; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 58 0021-4922 2019/04
• Improvement of material quality of (100) and (111) Ge-on-insulator substrates fabricated by smart-cut technology

  Cheol-Min Lim; Mitsuru Takenaka; Shinichi Takagi

  2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 Institute of Electrical and Electronics Engineers Inc. 139 - 141 2019/03
• Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  2019 Electron Devices Technology and Manufacturing Conference (EDTM) IEEE 2019/03
• Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  ACS APPLIED ELECTRONIC MATERIALS 1 (3) 311 - + 2637-6113 2019/03
• III-V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits

  Mitsuru Takenaka; Jae-Hoon Han; Frederic Boeuf; Jin-Kwon Park; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  JOURNAL OF LIGHTWAVE TECHNOLOGY 37 (5) 1474 - 1483 0733-8724 2019/03
• InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 125 (11) 0021-8979 2019/03
• Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

  Kwang-Won Jo; Wu-Kang Kim; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 114 (6) 0003-6951 2019/02
• Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces

  M. Ke; P. Cheng; K. Kato; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2018-December 34.3.1 - 34.3.4 0163-1918 2019/01
• Efficient germanium variable optical attenuator at 1.95µm wavelength using spin-on-glass doping

  Ziqiang Zhao; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Publications Institution of Engineering and Technology 2019 (765) 2019
• Si racetrack modulator with III-V/Si hybrid MOS optical phase shifter

  Qiang Li; ChongPei Ho; Shinichi Takagi; Mitsuru Takenaka

  IET Conference Publications Institution of Engineering and Technology 2019 (765) 2019
• High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform

  Takumi Fujigaki; Shinichi Takagi; Mitsuru Takenaka

  Optics Express OSA - The Optical Society 27 (5) 6451 - 6458 1094-4087 2019
• Coupled-resonator-induced-transparency on germanium-on-insulator mid-infrared platform

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019) 1949-2081 2019
• Fabrication and Electrical Characteristics of ZnSnO/Si Bilayer Tunneling Filed-Effect Transistors

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 (1) 1201 - 1208 2168-6734 2019
• Efficient Optical Modulator by Reverse-biased III-V/Si Hybrid MOS Capacitor based on FK Effect and Carrier Depletion

  Qiang Li; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  2019 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2019
• Equivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifter

  Qiang Li; Jae-Hoon Han; Tsung-En Lee; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019
• Numerical Analysis of III-V/Si Hybrid MOS Microdisk Modulator

  Shuhei Ohno; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019
• Investigation of optical loss and bandwidth of InP-organic hybrid optical modulator

  Naoki Sekine; Shinichi Takagi; Mitsuru Takenaka

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019
• Effects of thermal annealing on film quality of InAs-On-Insulator structures fabricated by Smart Cut method

  Kei Sumita; Jun Takeyasu; Kimihiko Kato; Mitsuru Takenaka; Shinichi Takagi

  2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019
• Advanced MOS Device Technology for Low Power Logic LSI

  Shinichi Takagi; Kimihiko Kato; Kei Sumita; Kwangwon Jo; Cheol-Min Lim; Ryotaro Takaguchi; Dae-Hwan Ahn; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka

  PROCEEDINGS OF THE 2019 26TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2019) 26 - 33 2019
• Investigation of Electrical Characteristics of Vertical Junction Si n-Type Tunnel FET

  Po-Chin Huang; Tetsufumi Tanamoto; Masakazu Goto; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 65 (12) 5511 - 5517 0018-9383 2018/12
• Low-Power Ge Thermo-Optic Phase Shifter on Ge-on-Insulator Platform

  Takumi Fujigaki; Shinichi Takagi; Mitsuru Takenaka

  European Conference on Optical Communication, ECOC Institute of Electrical and Electronics Engineers Inc. 2018- 2018/11
• III-V/Si Hybrid MOS Optical Phase Modulator for Si Photonic Integrated Circuits

  Mitsuru Takenaka; Jaehoon Han; Frederic Boeuf; Jinkwon Park; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  European Conference on Optical Communication, ECOC 2018-September 2018/11
• Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate

  Jian Kang; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 26 (23) 30546 - 30555 1094-4087 2018/11
• Tunable Grating Coupler by Thermal Actuation and Thermo-Optic Effect

  Chong Pei Ho; Ziqiang Zhao; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  IEEE PHOTONICS TECHNOLOGY LETTERS 30 (17) 1503 - 1506 1041-1135 2018/09
• Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

  Tae-Eon Bae; Kimihiko Kato; Ryota Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 113 (6) 0003-6951 2018/08
• Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

  Tae-Eon Bae; Yuki Wakabayashi; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics

  Jian Kang; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

  Kimihiko Kato; Hiroaki Matsui; Hitoshi Tabata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 112 (16) 0003-6951 2018/04
• Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

  Takumi Katoh; Ryo Matsumura; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3V operation

  Kentaro Kukita; Tadayoshi Uechi; Junji Shimokawa; Masakazu Goto; Yoshinori Yokota; Shigeru Kawanaka; Tetsufumi Tanamoto; Hiroyoshi Tanimoto; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

  Ryo Matsumura; Takumi Katoh; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Ge p-channel tunneling FETs with steep phosphorus profile source junctions

  Ryotaro Takaguchi; Ryo Matsumura; Takumi Katoh; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Low-loss graphene-based optical phase modulator operating at mid-infrared wavelength

  Yuki Yamaguchi; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) 0021-4922 2018/04
• Prospects and Challenges for Ge MOSFETs

  Takagi Shinichi; Jo Kwang-Won; Kim Wu-Kang; Ke Mengnan; Kato Kimihiko; Takenaka Mitsuru

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2018.1 289 - 289 2018/03
• Electrical characteristics of p-channel GOI tunneling FETs fabricated on p-type GOI

  Takaguchi Ryotaro; Kato Kimihiko; Ke Mengnan; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2018.1 3200 - 3200 2018/03
• Physical origins of slow traps for ALD high-k dielectrics on GeO_x/Ge interfaces

  Ke Mengnan; Kato Kimihiko; Takenaka Mitsuru; Takagi Shinichi

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2018.1 3075 - 3075 2018/03
• InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform

  Jin-Kown Park; Shinichi Takagi; Mitsuru Takenaka

  OPTICS EXPRESS 26 (4) 4842 - 4852 1094-4087 2018/02
• Ultra-low power III-V-based MOSFETs and Tunneling FETs

  Shinichi Takagi; Dae-Hwan Ahn; Takahiro Gotow; Chiaki Yokoyama; Chih-Yu Chang; Kiyoshi Endo; Kimihiko Kato; Mitsuru Takenaka

  ECS Transactions Electrochemical Society Inc. 85 (8) 27 - 37 1938-5862 2018
• MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI.

  Shinichi Takagi; Array; Wu-Kang Kim; Kwangwon Jo; Ryo Matsumura; Ryotaro Takaguchi; Dae-Hwan Ahn,Array; Mitsuru Takenaka

  48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018 IEEE 2018-September 6 - 11 1930-8876 2018 [Refereed]
  
• A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

  Stefan Glass; Kimihiko Kato; Lidia Kibkalo; Jean-Michel Hartmann; Shinichi Takagi; Dan Buca; Siegfried Mantl; Zhao Qing-Tai

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 (1) 1070 - 1076 2168-6734 2018
• Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation

  Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018) 2166-8884 2018
• Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 (1) 950 - 955 2168-6734 2018
• Low-crosstalk, low-power Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter

  Qiang Li; Jae-Hoon Han; Chong Pei Ho; Shinichi Takagi; Mitsuru Takenaka

  2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) 2018
• High-efficiency, Low-loss Optical Phase Modulator based on III-V/Si Hybrid MOS Capacitor

  Mitsuru Takenaka; Jae-Hoon Han; Jin-Kwon Park; Frederic Boeuf; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi

  2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) 2018
• Si Hybrid MOS Optical Phase Shifter for Switching and Computing

  Mitsuru Takenaka; Jaehoon Han; Qiang Li; Chong Pei Ho; Dongsheng Lyu; Shuhei Ohno; Shinichi Takagi

  2018 PHOTONICS IN SWITCHING AND COMPUTING (PSC) 2155-8515 2018
• Pretreatment Effects on High-k/InxGa1-xAs MOS Interface Properties and Their Physical Model

  Chiaki Yokoyama; Chi-Yu Chang; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 (1) 487 - 493 2168-6734 2018
• Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors

  Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 122 (17) 0021-8979 2017/11
• InP-based photonic integrated circuit platform on SiC wafer Mitsuru Takenaka and Shinichi Takagi

  Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 25 (24) 29993 - 30000 1094-4087 2017/11
• Preface

  Katsuyoshi Washio; Toshimichi Ito; Roger Loo; Seiichi Miyazaki; Shinichi Takagi

  MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 1 - 2 1369-8001 2017/11
• Low power Tunneling FET technologies using Ge/III-V materials

  S. Takagi; D.-H. Ahn; M. Noguchi; S.-H. Yoon; T. Gotow; K. Nishi; M. Kim; T.-E. Bae; T. Katoh; R. Matsumura; R. Takaguchi; M. Takenaka

  ECS Transactions 80 (4) 115 - 124 2017/10 [Refereed][Invited]
  
• Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics

  C. -Y. Chang; K. Endo; K. Kato; M. Takenaka; S. Takagi

  AIP ADVANCES 7 (9) 2158-3226 2017/09 [Refereed]
  
• Benchmarking Si, SiGe, and III-V/Si Hybrid SIS Optical Modulators for Datacenter Applications

  Frederic Boeuf; Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  JOURNAL OF LIGHTWAVE TECHNOLOGY 35 (18) 4047 - 4055 0733-8724 2017/09
• Effects of HfO2/Al2O3 gate stacks on electrical performance of planar InxGa1-xAs tunneling field-effect transistors

  Dae-Hwan Ahn; Sang-Hee Yoon; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 10 (8) 1882-0778 2017/08
• Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

  Jae-Hoon Han; Frederic Boeuf; Junichi Fujikata; Shigeki Takahashi; Shinichi Takagi; Mitsuru Takenaka

  NATURE PHOTONICS 11 (8) 486 - + 1749-4885 2017/08
• High performance 4.5-nm-thick compressively-strained Ge-on-insulator pMOSFETs fabricated by Ge condensation with optimized temperature control

  W. K. Kim; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology Institute of Electrical and Electronics Engineers Inc. T124 - T125 0743-1562 2017/07 [Refereed]
  
• Interface state generation of Al2O3/InGaAs MOS structures by electrical stress

  S. H. Yoon; C. Y. Chang; D. H. Ahn; M. Takenaka; S. Takagi

  Microelectronic Engineering Elsevier B.V. 178 313 - 317 0167-9317 2017/06 [Refereed]
  
• Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers

  M. Ke; M. Takenaka; S. Takagi

  Microelectronic Engineering Elsevier B.V. 178 132 - 136 0167-9317 2017/06 [Refereed]
  
• Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs

  C. -Y. Chang; Chiaki Yokoyama; M. Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 64 (6) 2519 - 2525 0018-9383 2017/06
• Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III-V-on-insulator wafer

  Naoki Sekine; Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 56 (4) 0021-4922 2017/04
• Evaluation of Mobility Degradation Factors and Performance Improvement of Ultrathin-Body Germanium-on-Insulator MOSFETs by GOI Thinning Using Plasma Oxidation

  Xiao Yu; Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 64 (4) 1418 - 1425 0018-9383 2017/04
• Tunneling MOSFET technologies using III-V/Ge materials

  S. Takagi; D. H. Ahn; M. Noguchi; T. Gotow; K. Nishi; M. Kim; M. Takenaka

  Technical Digest - International Electron Devices Meeting, IEDM Institute of Electrical and Electronics Engineers Inc. 19.5.1 - 19.5.4 0163-1918 2017/01 [Refereed]
  
• Optimization of modulation efficiency of InGaAsP/Si hybrid MOS optical modulator

  Qiang Li; Shinichi Takagi; Mitsuru Takenaka

  Optics InfoBase Conference Papers OSA - The Optical Society 2017 2017
• MOS interface defect control in Ge/III-V gate stacks

  S. Takagi; M. Ke; C. Y. Chang; C. Yokoyama; M. Yokoyama; T. Gotow; K. Nishi; S. H. Yoon; M. Takenaka

  ECS Transactions 80 (1) 109 - 118 1938-6737 2017
• Effects of Ge-source impurity concentration on electrical characteristics of Ge/Si hetero-junction tunneling FETs

  Tae-Eon Bae; Ryota Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2017 FIFTH BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS & STEEP TRANSISTORS WORKSHOP (E3S) 2017
• High-Efficiency O-Band Mach-Zehnder Modulator based on InGaAsP/Si Hybrid MOS Capacitor

  Jae-Hoon Han; Shinichi Takagi; Mitsuru Takenaka

  2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2017
• Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers

  Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

  2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) 296 - 299 1930-8876 2017
• Monolithic Integration of InGaAsP MZI Modulator and InGaAs Driver MOSFET using III-V CMOS Photonics

  Jin-Kwon Park; Shinichi Takagi; Mitsuru Takenaka

  2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2017
• III-V/Ge MOSFETs and TFETs for Ultra-Low Power Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) 1930-8868 2017
• Ultra-low power MOSFET and Tunneling FET technologies using III-V and Ge

  Shinichi Takagi; Mitsuru Takenaka

  2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) 1550-8781 2017
• Near-infrared and mid-infrared integrated photonics based on Ge-on-insulator platform

  Mitsuru Takenaka; Jian Kang; Shinichi Takagi

  30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) 105 - 106 2374-0140 2017
• III-V/Ge MOS device technologies for low power integrated systems

  S. Takagi; M. Noguchi; M. Kim; S. -H. Kim; C. -Y. Chang; M. Yokoyama; K. Nishi; R. Zhang; M. Ke; M. Takenaka

  SOLID-STATE ELECTRONICS 125 82 - 102 0038-1101 2016/11 [Refereed]
  
• Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Ryo Iida; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 9 (11) 1882-0778 2016/11
• InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 109 (21) 0003-6951 2016/11
• Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Rena Suzuki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 109 (18) 0003-6951 2016/10
• Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 120 (12) 0021-8979 2016/09
• Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

  M. Ke; X. Yu; C. Chang; M. Takenaka; S. Takagi

  Applied Physics Letters 109 (3) 0003-6951 2016/07
• Novel Ge waveguide platform on Ge-oninsulator wafer for mid-infrared photonic integrated circuits

  Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 24 (11) 1855 - 1864 1094-4087 2016/05
• Low-dark-current waveguide InGaAs metal-semiconductor-metal photodetector monolithically integrated with InP grating coupler on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 0021-4922 2016/04
• Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 0021-4922 2016/04
• Low resistivity lateral P-I-N junction formed by Ni-InGaAsP alloy for carrier injection InGaAsP photonic devices

  Jin-Kwon Park; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 0021-4922 2016/04
• Effect of III-V on insulator structure on quantum well intermixing

  Seiya Takashima; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (4) 0021-4922 2016/04
• Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  SOLID-STATE ELECTRONICS 117 77 - 87 0038-1101 2016/03
• First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 24 (3) 1979 - 1985 1094-4087 2016/02
• Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 63 (2) 558 - 564 0018-9383 2016/02
• Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al2O3/p-Si MOS capacitor formed by wafer bonding

  Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  2016 IEEE 13TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) 112 - 113 1949-2081 2016
• Design and Characterization of Ge Passive Waveguide Components on Ge-on-Insulator for Mid-Infrared Photonics

  Jian Kang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  2016 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2016
• InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer

  Jin-Kwon Park; Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  MRS ADVANCES 1 (48) 3295 - 3300 2059-8521 2016
• III-V MOS device technologies for advanced CMOS and tunneling FET

  Shinichi Takagi; Mitsuru Takenaka

  2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 2016
• Heterogeneous integration of SiGe/Ge and III-V for Si photonics

  Mitsuru Takenaka; Younghyun Kim; Jaehoon Han; Jian Kang; Yuki Ikku; Yongpeng Cheng; Jinkwon Park; Shinichi Takagi

  SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS V 9891 0277-786X 2016
• Heterogeneous integration of SiGe/Ge and III-V on Si for CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 24 - 25 2016
• Si/III-V CMOS photonics for low-power electronic-photonic integrated circuits on Si platform

  Mitsuru Takenaka; Shinichi Takagi

  2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2160-9020 2016
• Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut (TM) GeOI substrates

  Xiao Yu; Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  SOLID-STATE ELECTRONICS 115 120 - 125 0038-1101 2016/01
• Improvement in the modulation bandwidth of MOS optical modulators by using p-SiGe slab

  Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  Asia Communications and Photonics Conference, ACPC 2015 Optical Society of America (OSA) 2015/12
• Fabrication and MOS interface properties of ALD AlYO<inf>3</inf>/GeO<inf>x</inf>/Ge gate stacks with plasma post oxidation

  M. Ke; X. Yu; R. Zhang; J. Kang; C. Chang; M. Takenaka; S. Takagi

  Microelectronic Engineering Elsevier 147 244 - 248 0167-9317 2015/11 [Refereed]
  
• Effectiveness of Surface Potential Fluctuation for Representing Inversion-Layer Mobility Limited by Coulomb Scattering in MOSFETs

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 36 (11) 1183 - 1185 0741-3106 2015/11
• Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs

  Xiao Yu; Jian Kang; Rui Zhang; Wei-Li Cai; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 147 196 - 200 0167-9317 2015/11
• Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

  C. -Y. Chang; O. Ichikawa; T. Osada; M. Hata; H. Yamada; M. Takenaka; S. Takagi

  JOURNAL OF APPLIED PHYSICS 118 (8) 0021-8979 2015/08 [Refereed]
  
• Surface Leakage Reduction in MSM InGaAs Photodetector on III-V CMOS Photonics Platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  IEEE PHOTONICS TECHNOLOGY LETTERS 27 (14) 1569 - 1572 1041-1135 2015/07
• High I-on/I-off and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

  Munetaka Noguchi; SangHyeon Kim; Masafumi Yokoyama; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 118 (4) 0021-8979 2015/07
• Suppression of dark current in GeOx-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation

  Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 23 (13) 16967 - 16976 1094-4087 2015/06
• Effects of buffered HF cleaning on metal-oxide-semiconductor interface properties of Al2O3/InAs/GaSb structures

  Koichi Nishi; Masafumi Yokoyama; Haruki Yokoyama; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 8 (6) 1882-0778 2015/06
• III-V/Ge channel MOS device technologies in nano CMOS era

  Shinichi Takagi; Rui Zhang; Junkyo Suh; Sang-Hyeon Kim; Masafumi Yokoyama; Koichi Nishi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (6) 0021-4922 2015/06
• Demonstration of record-low injection-current variable optical attenuator based on strained SiGe with optimized lateral pin junction

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 23 (9) 12354 - 12361 1094-4087 2015/05
• Improvement of S-factor method for evaluation of MOS interface state density

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 0021-4922 2015/04
• Properties of ultrathin-body condensation Ge-on-insulator films thinned by additional thermal oxidation

  Wu-Kang Kim; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 0021-4922 2015/04
• Numerical Analysis of Carrier-Depletion Strained SiGe Optical Modulators With Vertical p-n Junction

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF QUANTUM ELECTRONICS 51 (4) 0018-9197 2015/04
• Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance

  Katsuhisa Tanaka; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 54 (4) 0021-4922 2015/04
• Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 106 (12) 0003-6951 2015/03
• High I<inf>on</inf>/I<inf>off</inf> Ge-source ultrathin body strained-SOI tunnel FETs - Impact of channel strain, MOS interfaces and back gate on the electrical properties

  Minsoo Kim; Yuki Wakabayashi; Ryosho Nakane; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM Institute of Electrical and Electronics Engineers Inc. 2015- (February) 13.2.1 - 13.2.4 0163-1918 2015/02 [Refereed]
  
• CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si

  M. Takenaka; Y. Kim; J. Han; J. Kang; Y. Ikku; Y. Cheng; J. K. Park; S. H. Kim; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM Institute of Electrical and Electronics Engineers Inc. 2016- 31.5.1 - 31.5.4 0163-1918 2015/02 [Refereed]
  
• Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

  Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 106 (7) 0003-6951 2015/02
• High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si

  K. Nishi; M. Yokoyama; H. Yokoyama; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi

  2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY) 2015 [Refereed]
  
• MOS interface control technologies for advanced III-V/Ge devices

  S. Takagi; C. Y. Chang; M. Yokoyama; K. Nishi; R. Zhang; M. Ke; J. H. Han; M. Takenaka

  ECS Transactions Electrochemical Society Inc. 69 (5) 37 - 51 1938-5862 2015 [Refereed]
  
• Impact of GeOx passivation on Dark Current for Wafer-bonded Ge-on-Insulator Metal-Semiconductor-Metal Photodetector

  Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) 73 - 74 1949-2081 2015
• Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect

  Minsoo Kim; Yuki K. Wakabayashi; Masafumi Yokoyama; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 62 (1) 9 - 15 0018-9383 2015/01
• SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe

  Younghyun Kim; Junichi Fujikata; Shigeki Takahashi; Mitsuru Takenaka; Shinichi Takagi

  2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2015
• Ge/III-V MOS Device Technologies for Low Power Integrated Systems

  Shinichi Takagi; Mitsuru Takenaka

  ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 20 - 25 1930-8876 2015
• Advanced Nano CMOS using Ge/III-V semiconductors for Low Power Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) 654 - 658 2015
• III-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applications

  Shinichi Takagi; Mitsuru Takenaka

  2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2015
• Ultrathin Body Germanium-on-Insulator (GeOI) Pseudo-MOSFETs Fabricated by Transfer of Epitaxial Ge Films on III-V Substrates

  Xiao Yu; Rui Zhang; Jian Kang; Tatsuro Maeda; Taro Itatani; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  ECS SOLID STATE LETTERS 4 (2) P15 - P18 2162-8742 2015
• Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut (TM) GeOI substrates

  Xiao Yu; Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) 161 - 164 2015
• Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nm

  Xiao Yu; Jian Kang; Mitsuru Takenaka; Shinichi Takagi

  2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2015
• A Ge Ultrathin-Body n-Channel Tunnel FET: Effects of Surface Orientation

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (11) 3594 - 3600 0018-9383 2014/11
• Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (11) 3668 - 3675 0018-9383 2014/11
• Sb-Doped S/D Ultrathin Body Ge-on Insulator nMOSFET Fabricated by Improved Ge Condensation Process

  W. -K. Kim; Kouichi Kuroda; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (10) 3379 - 3385 0018-9383 2014/10
• New materials for post-Si computing: Ge and GeSn devices

  Suyog Gupta; Xiao Gong; Rui Zhang; Yee-Chia Yeo; Shinichi Takagi; Krishna C. Saraswat

  MRS BULLETIN 39 (8) 678 - 686 0883-7694 2014/08
• Dielectric Thin Films for Future Electron Devices: Science and Technology FOREWORD

  Hiroyuki Kageshima; Shinichi Takagi; Renichi Yamada

  JAPANESE JOURNAL OF APPLIED PHYSICS 53 (8) 3 - 3 0021-4922 2014/08
• Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

  SangHyeon Kim; Yuki Ikku; Masafumi Yokoyama; Ryosho Nakane; Jian Li; Yung-Chung Kao; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 105 (4) 0003-6951 2014/07
• Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

  Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (7) 2316 - 2323 0018-9383 2014/07
• Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 (26) 0003-6951 2014/06
• Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

  Masafumi Yokoyama; Yuji Asakura; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 (26) 0003-6951 2014/06
• Strain-Modulated L-Valley Ballistic-Transport in (111) GaAs Ultrathin-Body nMOSFETs

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (5) 1335 - 1340 0018-9383 2014/05
• High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability

  Sang-Hyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (5) 1354 - 1360 0018-9383 2014/05
• Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

  Minsoo Kim; Younghyun Kim; Masafumi Yokoyama; Ryosho Nakane; SangHyeon Kim; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 557 298 - 301 0040-6090 2014/04
• Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator

  Younghyun Kim; Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 22 (7) 7458 - 7464 1094-4087 2014/04
• Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  SCIENTIFIC REPORTS 4 2045-2322 2014/04
• Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  THIN SOLID FILMS 557 342 - 345 0040-6090 2014/04
• Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures

  Nozomi Yoshida; Eiji Waki; Manabu Arai; Kimiyoshi Yamasaki; Jae-Hoon Han; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 557 237 - 240 0040-6090 2014/04
• Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method

  Weili Cai; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 115 (9) 0021-8979 2014/03
• Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

  SangHyeon Kim; Masafumi Yokoyama; Yuki Ikku; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 (11) 0003-6951 2014/03
• Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

  Masafumi Yokoyama; Koichi Nishi; Sanghyeon Kim; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 104 (9) 0003-6951 2014/03
• Impact of Plasma Postoxidation Temperature on the Electrical Properties of Al2O3/GeOx/Ge pMOSFETs and nMOSFETs

  Rui Zhang; Ju-Chin Lin; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (2) 416 - 422 0018-9383 2014/02
• III-V/Ge device engineering for CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  Materials Science Forum Trans Tech Publications Ltd 783-786 2028 - 2033 1662-9752 2014
• III-V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si

  M. Yokoyama; H. Yokoyama; M. Takenaka; S. Takagi

  2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers 2014 [Refereed]
  
• InGaAs Msm photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  IEICE ELECTRONICS EXPRESS 11 (16) 1349-2543 2014
• Waveguide InGaAs photodetector with Schottky barrier enhancement layer on III-V CMOS photonics platform

  Yongpeng Cheng; Yuki Ikku; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 1092-8669 2014
• Surface Orientation Depdendence of Electro-optic Effects in InGaAsP for Lateral PIN-junction InGaAsP Photonic-wire Modulators

  Yuki Ikku; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 1092-8669 2014
• Ultra-small, Low-crosstalk, Electrically-driven InGaAsP Photonic-wire Optical Switches on III-V CMOS Photonics Platform

  Yuki Ikku; Masafumi Yokoyama; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2014
• High I-on/I-off Ge-source ultrathin body strained-SOI Tunnel FETs

  Minsoo Kim; Yuki Wakabayashi; Ryosho Nakane; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2380-9248 2014
• Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) 1949-2081 2014
• Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications

  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi

  2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2014
• Multi-bandgap III-V on Insulator Wafer fabricated by Quantum Well Intermixing for III-V CMOS Photonics Platform

  Misa Kuramochi; Mitsuru Takenaka; Yuki Ikku; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 1092-8669 2014
• Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

  Koichi Nishi; Masafumi Yokoyama; Sanghyeon Kim; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 115 (3) 0021-8979 2014/01
• Thin body GaSb-OI p-MOSFETs on Si wafers fabricated by direct wafer bonding

  Koichi Nishi; Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 1092-8669 2014
• III-V/Ge CMOS Device Technologies for Future Logic LSIs

  Shinichi Takagi; Mitsuru Takenaka

  2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) 1 - + 2014
• Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates

  Xiao Yu; Rui Zhang; Jian Kang; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) 2014
• Analysis and Comparison of L-Valley Transport in GaAs, GaSb, and Ge Ultrathin-Body Ballistic nMOSFETs

  Khairul Alam; Shinichi Takagi; Mitsuru Takenaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (12) 4213 - 4218 0018-9383 2013/12
• Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 13 (4) 456 - 462 1530-4388 2013/12
• High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (10) 3342 - 3350 0018-9383 2013/10
• Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

  SangHyeon Kim; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 114 (16) 0021-8979 2013/10
• Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

  Shinichi Takagi; Rui Zhang; Mitsuru Takenaka

  MICROELECTRONIC ENGINEERING 109 389 - 395 0167-9317 2013/09
• Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 103 (14) 0003-6951 2013/09
• Formation of III-V-on-insulator structures on Si by direct wafer bonding

  Masafumi Yokoyama; Ryo Iida; Yuki Ikku; Sanghyeon Kim; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28 (9) 0268-1242 2013/09
• Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

  Sanghyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (8) 2512 - 2517 0018-9383 2013/08
• Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth

  Younghyun Kim; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 21 (17) 19615 - 19623 1094-4087 2013/08
• Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sung-Hoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON NANOTECHNOLOGY 12 (4) 621 - 628 1536-125X 2013/07
• Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

  Jaehoon Han; Rui Zhang; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 6 (5) 1882-0778 2013/05
• Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si

  Sung-Ho Jeon; Noriyuki Taoka; Hiroaki Matsumoto; Kiyotaka Nakano; Susumu Koyama; Hiroshi Kakibayasi; Koji Araki; Moriya Miyashita; Koji Izunome; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 52 (4) 0021-4922 2013/04
• InGaAsP Grating Couplers Fabricated Using Complementary-Metal-Oxide-Semiconductor-Compatible III-V-on-Insulator on Si

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 6 (4) 1882-0778 2013/04
• High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (3) 927 - 934 0018-9383 2013/03
• Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 102 (8) 0003-6951 2013/02
• Low-crosstalk 2 × 2 InGaAsP photonic-wire optical switches using III-V CMOS photonics platform

  Y. Ikku; M. Yokoyama; M. Noguchi; O. Ichikawa; T. Osada; M. Hata; M. Takenaka; S. Takagi

  IET Conference Publications 2013 (622) 942 - 944 2013 [Refereed]
  
• Low temperature surface passivation for carrier injection type SiGe optical modulator

  Younghyun Kim; Jaehoon Han; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP 99 - 100 1949-2081 2013 [Refereed]
  
• Dark current suppression for germanium metal-semiconductor-metal photodetector by plasma post-oxidation passivation

  Jian Kang; Rui Zhang; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP 140 - 141 1949-2081 2013 [Refereed]
  
• Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

  C. Y. Chang; M. Yokoyama; S. H. Kim; O. Ichikawa; T. Osada; M. Hata; M. Takenaka; S. Takagi

  Microelectronic Engineering 109 28 - 30 0167-9317 2013 [Refereed]
  
• Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs

  SangHyeon Kim; Masafumi Yokoyama; Yuki Ikku; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenakal; Shinichi Takagi

  2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) 139 - 142 1930-8876 2013
• High I-on/I-off and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions

  Munetaka Noguchi; SangHyeon Kim; Masafumi Yokoyama; SangMin Ji; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2013
• MOS interface engineering for high-mobility Ge CMOS

  Mitsuru Takenaka; Rui Zhang; Shinichi Takagi

  2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) 1541-7026 2013
• Sulfur cleaning for (100) (111)A and (111)B InGaAs surfaces with in content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

  Masafumi Yokoyama; Noriyuki Taoka; Rena Suzuki; Osamu Ichikawa; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 167 - 170 1092-8669 2013
• Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties

  Masafumi Yokoyama; Yuji Asakura; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 1092-8669 2013
• Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform

  Yuki Ikku; Masafumi Yokoyama; Osamu Ichikawa; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  OPTICS EXPRESS 20 (26) B357 - B364 1094-4087 2012/12
• Formation of Thin Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  JAPANESE JOURNAL OF APPLIED PHYSICS 51 (12) 0021-4922 2012/12
• Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

  Takuya Hoshii; Sunghoon Lee; Rena Suzuki; Noriyuki Taoka; Masafumi Yokoyama; Hishashi Yamada; Masahiko Hata; Tetsuji Yasuda; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 112 (7) 0021-8979 2012/10
• Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

  Rena Suzuki; Noriyuki Taoka; Masafumi Yokoyama; Sang-Hyeon Kim; Takuya Hoshii; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 112 (8) 0021-8979 2012/10
• Uniformity improvement of selectively-grown InGaAs micro-discs on Si

  Masakazu Sugiyama; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano

  JOURNAL OF CRYSTAL GROWTH 352 (1) 229 - 234 0022-0248 2012/08
• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

  Masafumi Yokoyama; Sanghyeon Kim; Rui Zhang; Noriyuki Taoka; Yuji Urabe; Tatsuro Maeda; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 (7) 1882-0778 2012/07
• Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb

  Cezar B. Zota; Sang-Hyeon Kim; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 (7) 1882-0778 2012/07
• Controlling Anion Composition at Metal-Insulator-Semiconductor Interfaces on III-V Channels by Plasma Processing

  Wipakorn Jevasuwan; Yuji Urabe; Tatsuro Maeda; Noriyuki Miyata; Tetsuji Yasuda; Akihiro Ohtake; Hisashi Yamada; Masahiko Hata; Sunghoon Lee; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 51 (6) 0021-4922 2012/06
• Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 100 (19) 0003-6951 2012/05
• High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  APPLIED PHYSICS LETTERS 100 (21) 0003-6951 2012/05
• Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping

  Mitsuru Takenaka; Kiyohito Morii; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  OPTICS EXPRESS 20 (8) 8718 - 8725 1094-4087 2012/04
• 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

  R. Suzuki; N. Taoka; M. Yokoyama; S. Lee; S. H. Kim; T. Hoshii; T. Yasuda; W. Jevasuwan; T. Maeda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  APPLIED PHYSICS LETTERS 100 (13) 3  0003-6951 2012/03 [Refereed]
  
• Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

  Wipakorn Jevasuwan; Yuji Urabe; Tatsuro Maeda; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Masahiko Hata; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  MATERIALS 5 (3) 404 - 414 1996-1944 2012/03
• In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 100 (7) 0003-6951 2012/02
• High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation

  Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 59 (2) 335 - 341 0018-9383 2012/02
• Sub-60 nm deeply-scaled channel length extremely-thin body In xGa 1-xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering

  S. H. Kim; M. Yokoyama; N. Taoka; R. Nakane; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 177 - 178 0743-1562 2012 [Refereed]
  
• Numerical analysis of strained SiGe-based carrier-injection optical modulators

  Younghyun Kim; Mitsuru Takenaka; Shinichi Takagi

  IEEE International Conference on Group IV Photonics GFP 126 - 128 1949-2081 2012 [Refereed]
  
• High mobility CMOS technologies using III-V/Ge channels on Si platform

  Shinichi Takagi; Mitsuru Takenaka

  2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 1 - 4 2012 [Refereed]
  
• Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 5 (1) 1882-0778 2012/01
• Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators

  Mitsuru Takenaka; Shinichi Takagi

  IEEE JOURNAL OF QUANTUM ELECTRONICS 48 (1) 8 - 16 0018-9197 2012/01
• Formation of 1.7-nm-thick-EOT Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process

  Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

  SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES 50 (9) 1085 - 1090 1938-5862 2012
• Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High N-s Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces

  Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi

  2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2012
• Effect of Sample Thickness on SiO2/Si Interface Roughness Characterization through Transmission Electron Microscope Measurements in Strained-Si MOSFETs

  Yi Zhao; Hirosaki Matsumoto; Susumu Koyama; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY 159 (1) H57 - H60 0013-4651 2012
• Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

  Ryo Iida; Sang-Hyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Sang-Hoon Lee; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 110 (12) 0021-8979 2011/12
• Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

  Noriyuki Miyata; Hiroyuki Ishii; Yuji Urabe; Taro Itatani; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 88 (12) 3459 - 3461 0167-9317 2011/12
• High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 (11) 1882-0778 2011/11
• Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 99 (14) 0003-6951 2011/10
• Accurate evaluation of Ge metal-insulator-semiconductor interface properties

  Noriyuki Taoka; Keiji Ikeda; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 110 (6) 0021-8979 2011/09
• Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Al2O3 Buried Oxide Layers

  Masafumi Yokoyama; Ryo Iida; Sanghyeon Kim; Noriyuki Taoka; Yuji Urabe; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 32 (9) 1218 - 1220 0741-3106 2011/09
• Suppression of Interface State Generation in Si MOSFETs with Biaxial Tensile Strain

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 32 (8) 1005 - 1007 0741-3106 2011/08
• AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

  Noriyuki Taoka; Masafumi Yokoyama; Sang Hyeon Kim; Rena Suzuki; Takuya Hoshii; Ryo Iida; Sunghoon Lee; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  MICROELECTRONIC ENGINEERING 88 (7) 1087 - 1090 0167-9317 2011/07
• Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 98 (24) 0003-6951 2011/06
• Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding

  Masafumi Yokoyama; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 (5) 1882-0778 2011/05
• High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal-Organic Vapor Phase Epitaxy

  Momoko Deura; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yukihiro Shimogaki; Yoshiaki Nakano; Masakazu Sugiyama

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 (4) 0021-4922 2011/04
• Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 109 (8) 0021-8979 2011/04
• Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

  Sanjeewa Dissanayake; Yi Zhao; S. Sugahara; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 109 (3) 0021-8979 2011/02
• Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy

  SangHyeon Kim; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 4 (2) 1882-0778 2011/02
• Enhancement technologies and physical understanding of electron mobility in III-V n-MOSFETs with strain and MOS interface buffer engineering

  S. H. Kim; M. Yokoyama; N. Taoka; R. Nakane; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 13.4.4  0163-1918 2011
• III-V on silicon for high-speed electronics and CMOS photonics

  Mitsuru Takenaka; Shinichi Takagi

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 1092-8669 2011
• Scalable TaN metal source/drain & gate InGaAs/Ge n/pMOSFETs

  Maeda T; Urabe Y; Itatani T; Ishii H; Miyata N; Yasuda T; Yamada H; Hata M; Yokoyama M; Takenaka M; Takagi S

  Digest of Technical Papers - Symposium on VLSI Technology 62 - 63 2011 [Refereed]
  
• Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloys

  Kim S.H; Yokoyama M; Taoka N; Iida R; Lee S; Nakane R; Urabe Y; Miyata N; Yasuda T; Yamada H; Fukuhara N; Hata M; Takenaka M; Takagi S

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2011 [Refereed]
  
• Highly-strained SGOI p-channel MOSFETs fabricated by applying Ge condensation technique to strained-SOI substrates

  Junkyo Suh; Ryosho Nakane; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  Device Research Conference - Conference Digest, DRC 235 - 236 1548-3770 2011 [Refereed]
  
• High mobility material channel CMOS technologies based on heterogeneous integration

  Shinichi Takagi; Mitsuru Takenaka

  Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011 1 - 6 2011 [Refereed]
  
• Advanced CMOS technologies using III-V/Ge channels

  Shinichi Takagi; Mitsuru Takenaka

  International Symposium on VLSI Technology, Systems, and Applications, Proceedings 20 - 21 2011 [Refereed]
  
• MOS Interface Control Technologies for III-V/Ge Channel MOSFETs

  S. Takagi; R. Zhang; T. Hoshii; N. Taoka; M. Takenaka

  PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9 41 (3) 3 - 20 1938-5862 2011 [Refereed]
  
• Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation

  N. Taoka; M. Yokoyama; S. H. Kim; R. Suzuki; R. Iida; S. Lee; T. Hoshii; W. Jevasuwan; T. Maeda; T. Yasuda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2011 [Refereed]
  
• CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding

  M. Yokoyama; S. H. Kim; R. Zhang; N. Taoka; Y. Urabe; T. Maeda; H. Takagi; T. Yasuda; H. Yamada; O. Ichikawa; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 60 - 61 0743-1562 2011
• ALD Al 2O 3 activated direct wafer bonding for 111-V CMOS photonics platform

  Y. Ikku; M. Yokoyama; R. Iida; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 1092-8669 2011
• Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction

  M. Takenaka; K. Morii; M. Sugiyama; Y. Nakano; S. Takagi

  IEEE International Conference on Group IV Photonics GFP 36 - 38 1949-2081 2011
• Fabrication of Ge-rich SiGe-On-Insulator Waveguide for Optical Modulator

  Younghyun Kim; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  2011 IEEE PHOTONICS CONFERENCE (PHO) 465 - 466 2011
• Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers

  Yosuke Nakakita; Ryosho Nakakne; Takashi Sasada; Mitsuru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 (1) 0021-4922 2011/01
• Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Full Ballistic Transport

  Shinichi Takagi; Mitsuru Takenaka

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 (1) 0021-4922 2011/01
• High Mobility Ge-based CMOS Device Technologies

  Shinichi Takagi; Sanjeewa Dissanayake; Mitsuru Takenaka

  TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS 470 1 - 7 1013-9826 2011
• 37th IEEE International SOI Conference Tempe Mission Palms Hotel and Conference Center, Tempe, Arizona, USA, 3-6 October, 2011 (III-V/Ge)-On-Insulator CMOS Technology

  Shinichi Takagi

  2011 IEEE INTERNATIONAL SOI CONFERENCE 1078-621X 2011
• Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal-Organic Source

  Mitsuru Takenaka; Kiyohito Morii; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 50 (1) 0021-4922 2011/01
• Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

  Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY 158 (8) G178 - G184 0013-4651 2011
• 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

  Rui Zhang; Noriyuki Taoka; Po-Chin Huang; Mitsuru Takenaka; Shinichi Takagi

  2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2011
• Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

  Yuji Urabe; Masafumi Yokoyama; Hideki Takagi; Tetsuji Yasuda; Noriyuki Miyata; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 97 (25) 0003-6951 2010/12
• Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 108 (10) 0021-8979 2010/11
• A Novel Characterization Scheme of Si/SiO2 Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

  Yi Zhao; Hirosaki Matsumoto; Takeshi Sato; Susumu Koyama; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 57 (9) 2057 - 2066 0018-9383 2010/09
• Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal–Oxide–Semiconductor Field-Effect Transistors

  Weber Olivier; Takenaka Mitsuru; Takagi Shin-ichi

  Jpn J Appl Phys The Japan Society of Applied Physics 49 (7) 74101 - 074101-5 0021-4922 2010/07
• Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

  Momoko Deura; Yoshiyuki Kondo; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 312 (8) 1353 - 1358 0022-0248 2010/04
• Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si

  Yoshiyuki Kondo; Momoko Deura; Yuki Terada; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 312 (8) 1348 - 1352 0022-0248 2010/04
• III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Noriyuki Miyata; Yuji Urabe; Hiroyuki Ishii; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 96 (14) 0003-6951 2010/04
• High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping

  Morii, K.; Iwasaki, T.; Nakane, R.; Takenaka, M.; Takagi, S.

  IEEE Electron Device Letters 31 (10) 0741-3106 2010
• Origins for electron mobility improvement in InGaAs MISFETs with (NH4)2S treatment

  Urabe Y; Miyata N; Yasuda T; Ishii H; Itatani T; Yamada H; Fukuhara N; Hata M; Yokoyama M; Takenaka M; Takagi S

  Materials Research Society Symposium Proceedings 1252 105 - 110 2010 [Refereed]
  
• III-V-On-Insulator MOSFETs on Si Substrates Fabricated by Direct Bonding Technique

  S. Takagi; M. Yokoyama; H. Takagi; Y. Urabe; T. Yasuda; H. Yamada; M. Hata; M. Takenaka

  SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE 33 (4) 359 - 370 1938-5862 2010 [Refereed]
  
• Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

  Hoshii T; Yokoyama M; Yamada H; Hata M; Yasuda T; Takenaka M; Takagi S

  Applied Physics Letters 97 (13) 3  2010 [Refereed]
  
• Self-aligned metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy

  S. H. Kim; M. Yokoyama; N. Taoka; R. Iida; S. Lee; R. Nakane; Y. Urabe; N. Miyata; T. Yasuda; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

  2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST 2380-9248 2010 [Refereed]
  
• Advanced non-Si channel CMOS technologies on Si platform

  Shinichi Takagi; Mitsuru Takenaka

  ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings 50 - 53 2010 [Refereed]
  
• Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces

  T. Haimoto; T. Hoshii; S. Nakagawa; M. Takenaka; S. Takagi

  APPLIED PHYSICS LETTERS 96 (1) 0003-6951 2010/01 [Refereed]
  
• Relationships between interface structures and electrical properties in the high-κ/III-V system

  Tetsuji Yasuda; Noriyuki Miyata; Yuji Urabe; Hiroyuki Ishii; Taro Itatani; Hideki Takagi; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Akihiro Ohtake; Masafumi Yokoyama; Takuya Hoshii; Takashi Haimoto; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  Materials Research Society Symposium Proceedings 1194 53 - 64 0272-9172 2010
• High mobility III-V-on-insulator MOSFETs on Si with ALD-Al 2O3 BOX layers

  M. Yokoyama; Y. Urabe; T. Yasuda; H. Takagi; H. Ishii; N. Miyata; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 235 - 236 0743-1562 2010
• Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding

  M. Yokoyama; R. Iida; S. H. Kim; N. Taoka; Y. Urabe; T. Yasuda; H. Takagi; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 0163-1918 2010
• High quality thin body III-V-on-insulator channel layer transfer on Si wafer using direct wafer bonding

  M. Yokoyama; T. Yasuda; H. Takagi; H. Yamada; Y. Urabe; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  ECS Transactions 33 (4) 391 - 401 1938-5862 2010
• High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique

  Sanjeewa Dissanayake; Kentaro Tomiyama; Satoshi Sugahara; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 3 (4) 1882-0778 2010
• Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal-Organic Vapor Phase Epitaxy

  Yoshiyuki Kondo; Momoko Deura; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 (12) 0021-4922 2010
• High Electron Mobility Ge n-Channel Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique

  Tatsuro Maeda; Yukinori Morita; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 3 (6) 1882-0778 2010
• Impact of Ge nitride interfacial layers on performance of Metal Gate/High-k Ge-nMISFETs

  Tatsuro Maeda; Yukinori Morita; Shinichi Takagi

  2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS 213 - 214 2010
• Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal-Oxide-Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

  Yukio Nakabayashi; Takamitsu Ishihara; Toshinori Numata; Ken Uchida; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 (4) 0021-4922 2010
• Ultrasmall Arrayed Waveguide Grating Multiplexer using InP-based Photonic Wire Waveguide on Si wafer for III-V CMOS photonics

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC 2010
• Effect of Ge Metal-Insulator-Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge

  Noriyuki Taoka; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 49 (4) 0021-4922 2010
• Correlation between Channel Mobility Improvements and Negative V-th Shifts in III-V MISFETs: Dipole Fluctuation as New Scattering Mechanism

  Yuji Urabe; Noriyuki Miyata; Hiroyuki Ishii; Taro Itatani; Tatsuro Maeda; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masafumi Yokoyama; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi

  2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST 2380-9248 2010
• III-V-SEMICONDUCTOR-ON-INSULATOR MISFETs ON Si WITH BURIED SiO2 AND Al2O3 LAYERs BY DIRECT WAFER BONDING

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Yuji Urabe; Hiroyuki Ishii; Noriyuki Miyata; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 1092-8669 2010
• Evidence of Correlation between Surface Roughness and Interface States Generation in Unstrained and Strained-Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS 77 - 78 2010
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

  Hiroyuki Ishii; Noriyuki Miyata; Yuji Urabe; Taro Itatani; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 (12) 1882-0778 2009/12
• InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer

  Mitsuru Takenaka; Masafumi Yokoyama; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 (12) 1882-0778 2009/12
• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

  Masafumi Yokoyama; Tetsuji Yasuda; Hideki Takagi; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS EXPRESS 2 (12) 1882-0778 2009/12
• Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

  Yoshihiko Moriyama; Norio Hirashita; Koji Usuda; Shu Nakaharai; Naoharu Sugiyama; Eiji Toyoda; Shin-ichi Takagi

  Applied Surface Science Elsevier 256 (3) 823 - 829 0169-4332 2009/11
• Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

  Takashi Sasada; Yosuke Nakakita; Mitsuru Takenaka; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 106 (7) 0021-8979 2009/10
• On Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Biaxially Tensile-Strained Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE ELECTRON DEVICE LETTERS 30 (9) 987 - 989 0741-3106 2009/09
• Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

  Noriyuki Taoka; Toyoji Yamamoto; Masatomi Harada; Yoshimi Yamashita; Naoharu Sugiyama; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 106 (4) 0021-8979 2009/08
• Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 56 (5) 1152 - 1156 0018-9383 2009/05
• Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation

  Kunihiro Suzuki; Keiji Ikeda; Yoshimi Yamashita; Masaomi Harada; Noriyuki Taoka; Osamu Kiso; Toyoji Yamamoto; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 56 (4) 627 - 633 0018-9383 2009/04
• Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

  Kiyohito Morii; Sanjeewa Dissanayake; Satoshi Tanabe; Ryosho Nakane; Mitsuru Takenaka; Satoshi Sugahara; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 48 (4) 0021-4922 2009/04
• Investigation of InAlAs Oxide/InP Metal-Oxide-Semiconductor Structures Formed by Wet Thermal Oxidation

  Shota Nakagawa; Masafumi Yokoyama; Osamu Ichikawa; Masahiko Hata; Masaaki Tanaka; Mituru Takenaka; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS 48 (4) 0021-4922 2009/04
• Structural analyses of strained SiGe wires formed by hydrogen thermal etching and Ge-condensation processes

  Tsutomu Tezuka; Eiji Toyoda; Toshifumi Irisawa; Norio Hirashita; Yoshihiko Moriyama; Naoharu Sugiyama; Koji Usuda; Shin-Ichi Takagi

  Applied Physics Letters 94 (8) 0003-6951 2009
• MOVPE微小領域選択成長におけるSi上InAs核発生の成長条件依存性

  近藤 佳幸; 出浦 桃子; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集 公益社団法人 化学工学会 2009 13 - 13 2009
• 微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析

  出浦 桃子; 近藤 佳幸; 星井 拓也; 竹中 充; 高木 信一; 中野 義昭; 杉山 正和

  化学工学会 研究発表講演要旨集 公益社団法人 化学工学会 2009 2 - 2 2009
• Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique

  S. Nakaharai; T. Tezuka; N. Hirashita; E. Toyoda; Y. Moriyama; N. Sugiyama; S. Takagi

  Journal of Applied Physics 105 (2) 0021-8979 2009
• Uniform InGaAs micro-discs on Si by micro-channel selective-area movpe

  M. Deura; T. Hoshii; M. Takenaka; S. Takagi; Y. Nakano; M. Sugiyama

  Conference Proceedings - International Conference on Indium Phosphide and Related Materials 48 - 51 1092-8669 2009
• High mobility metal S/D III-V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding

  M. Yokoyama; T. Yasuda; H. Takagi; H. Yamada; N. Fukuhara; M. Hata; M. Sugiyama; Y. Nakano; M. Takenaka; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 242 - 243 0743-1562 2009
• In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si

  M. Deura; Y. Kondo; T. Hoshii; M. Takenaka; S. Takagi; Y. Nakano; M. Sugiyama

  ECS Transactions 25 (8 PART 1) 521 - 524 1938-5862 2009
• Ge/III-V channel engineering for future CMOS

  S. Takagi; M. Sugiyama; T. Yasuda; M. Takenaka

  ECS Transactions 19 (5) 9 - 20 1938-5862 2009
• Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy

  Momoko Deura; Takuya Hoshii; Takahisa Yamamoto; Yuichi Ikuhara; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  APPLIED PHYSICS EXPRESS 2 (1) 1882-0778 2009/01
• High Performance GeO2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping

  Kiyohito Morii; Takashi Iwasaki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

  2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING 637 - 640 2380-9248 2009
• High Mobility Channel CMOS Technologies for Realizing High Performance LSI's

  Shinichi Takagi

  PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE 153 - 160 2009
• SOURCE/DRAIN FORMATION BY USING EPITAXIAL REGROWTH OF N plus InP FOR III-V NMOSFETS

  Mitsuru Takenaka; Koji Takeda; Takuya Hoshii; Takuo Tanemura; Masakazu Sugiyama; Yoshiaki Nakano; Shinichi Takagi

  2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) 111 - 114 1092-8669 2009
• Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique

  T. Irisawa; T. Numata; N. Hirashita; Y. Moriyama; S. Nakaharai; T. Tezuka; N. Sugiyama; S. Takagi

  Thin Solid Films 517 (1) 167 - 169 0040-6090 2008/11
• Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si

  Momoko Deura; Takuya Hoshii; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

  JOURNAL OF CRYSTAL GROWTH 310 (23) 4768 - 4771 0022-0248 2008/11
• (110) Ultrathin GOI layers fabricated by Ge condensation method

  Sanjeewa Dissanayake; Yusuke Shuto; Satoshi Sugahara; Mitsuru Takenaka; Shinichi Takagi

  THIN SOLID FILMS 517 (1) 178 - 180 0040-6090 2008/11
• Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process

  Hirashita Norio; Moriyama Yoshihiko; Nakaharai Shu; Irisawa Toshifumi; Sugiyama Naoharu; Takagi Shin-ichi

  Applied Physics Express The Japan Society of Applied Physics 1 (10) 101401 - 101401-3 1882-0778 2008/10
• Devices structures and carrier transport properties of advanced CMOS using high mobility channels

  Shinichi Takagi; Tsutomu Tezuka; Toshifumi Irisawa; Shu Nakaharai; Toshinori Numata; Koji Usuda; Naoharu Sugiyama; Masato Shichijo; Ryosho Nakane; Satoshi Sugahara

  Electronic Device Architectures for the Nano-CMOS Era: From Ultimate CMOS Scaling to Beyond CMOS Devices 81 - 103 2008/10
• NMR study on the formation mechanism of beta-SiAlON from zeolite by nitridation using ammonia gas

  Toru Wakihara; Yuri Saito; Junichi Tatami; Katsutoshi Komeya; Takeshi Meguro; Kenneth J. D. Mackenzie; Shinichi Takagi; Masahiro Yokouchi

  JOURNAL OF THE CERAMIC SOCIETY OF JAPAN 116 (1357) 980 - 983 1882-0743 2008/09
• Experimental examination and physical understanding of the Coulomb scattering mobility in strained-Si nMOSFETs

  Olivier Weber; Shinichi Takagi

  IEEE TRANSACTIONS ON ELECTRON DEVICES 55 (9) 2386 - 2396 0018-9383 2008/09
• Evidence of low interface trap density in GeO(2)/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

  Hiroshi Matsubara; Takashi Sasada; Mitsuru Takenaka; Shinichi Takagi

  APPLIED PHYSICS LETTERS 93 (3) 0003-6951 2008/07
• Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates

  Sugiyama Naoharu; Numata Toshinori; Hirashita Norio; Irisawa Toshifumi; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 47 (6) 4403 - 4407 0021-4922 2008/06
• Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

  Noriyuki Taoka; Masatomi Harada; Yoshimi Yamashita; Toyoji Yamamoto; Naoharu Sugiyama; Shin-Ichi Takagi

  APPLIED PHYSICS LETTERS 92 (11) 0003-6951 2008/03
• Device design and electron transport properties of uniaxially strained-SOI tri-gate nMOSFETs

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 55 (2) 649 - 654 0018-9383 2008/02
• Physical understanding of strain-induced modulation of gate oxide reliability in MOSFETs

  Toshifumi Irisawa; Toshinori Numata; Eiji Toyoda; Norio Hirashita; Tsutomu Tezuka; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 55 (11) 3159 - 3166 0018-9383 2008
• Effects of gate current stress on electrical characteristics

  Masatomi Harada; Noriyuki Taoka; Toyoji Yamamoto; Yoshimi Yamashita; Osamu Kiso; Naoharu Sugiyama; Shin-ichi Takagi

  ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON 15 - 18 2008
• Ge photodetector integrated with ge-on-insulator MOSFET by using oxidation condensation technique

  M. Takenaka; S. Tanabe; S. Dissanayake; S. Sugahara; S. Takagi

  Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 117 - 118 1092-8081 2008 [Refereed]
  
• Uniaxially strained Si/SiGe wire-channel transistors

  T. Tezuka; T. Irisawa; E. Toyoda; N. Sugiyama; S. Takagi

  ECS Transactions 13 (1) 263 - 274 1938-5862 2008
• Uniaxially strained SGOI and SSOI channels for high performance multi-gate CMOS

  T. Irisawa; T. Numata; T. Tezuka; K. Usuda; N. Hirashita; Y. Moriyama; N. Sugiyama; S. Takagi

  ECS Transactions 16 (10) 367 - 379 1938-5862 2008
• Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas

  Takuya Hoshii; Momoko Deura; Masakazu Sugiyama; Ryosho Nakane; Satoshi Sugahara; Mitsuru Takenaka; Yoshiaki Nakano; Shinichi Takagi

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 5 (9) 2733 - + 1862-6351 2008
• Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO(2) Interfacial Layers

  Yosuke Nakakita; Ryosho Nakane; Takashi Sasada; Hiroshi Matsubara; Mitsuru Takenaka; Shinichi Takagi

  IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST 877 - 880 2008
• Carrier-transport-enhanced channel CMOS for improved power consumption and performance

  Shinichi Takagi; Toshifurni Irisawa; Tsutomu Tezuka; Toshinori Numata; Shu Nakaharai; Norio Hirashita; Yoshihiko Moriyama; Koji Usuda; Eiji Toyoda; Sanjeewa Dissanayake; Masato Shichijo; Ryosho Nakane; Satoshi Sugahara; Mitsuru Takenaka; Naoharu Sugiyama

  IEEE TRANSACTIONS ON ELECTRON DEVICES 55 (1) 21 - 39 0018-9383 2008/01
• Advanced nano CMOS platform using carrier-transport-enhanced channels

  Shinichi Takagi

  2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM 91 - 92 2008
• Understanding and Engineering of Carrier Transport in Advanced MOS Channels

  Shinichi Takagi

  SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 9 - 12 2008
• Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs

  Yi Zhao; Mitsuru Takenaka; Shinichi Takagi

  IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST 577 - 580 2380-9248 2008
• Fabrication of III-V on insulator structures on si using microchannel epitaxy with a two-step growth technique

  Masato Shichijo; Ryosho Nakane; Satoshi Sugahara; Shinichi Takagi

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (9A) 5930 - 5934 0021-4922 2007/09
• Hole-mobility enhancement in Ge-rich strained SiGe-on-insulator pMOSFETs at high temperatures

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Naoharu Sugiyama; Akihito Tanabe; Koji Usuda; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 54 (5) 1249 - 1252 0018-9383 2007/05
• Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy

  Uehara Takashi; Matsubara Hiroshi; Nakane Ryosho; Sugahara Satoshi; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 46 (4) 2117 - 2121 0021-4922 2007/04
• Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

  Hoshii Takuya; Sugahara Satoshi; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 46 (4) 2122 - 2126 0021-4922 2007/04
• Device structures and carrier transport properties of advanced CMOS using high mobility channels

  S. Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Numata; K. Usuda; N. Sugiyama; M. Shichijo; R. Nakane; S. Sugahara

  Solid-State Electronics 51 (4 SPEC. ISS.) 526 - 536 0038-1101 2007/04
• Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures

  Tatsuro Maeda; Masayasu Nishizawa; Yukinori Morita; Shinichi Takagi

  APPLIED PHYSICS LETTERS 90 (7) 0003-6951 2007/02
• Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process

  Tsutomu Tezuka; Norio Hirashita; Yoshihiko Moriyama; Shu Nakaharai; Naoharu Sugiyama; Shin-Ichi Takagi

  Applied Physics Letters 90 (18) 0003-6951 2007
• Strained SOI/SGOI dual-channel CMOS technology based on the Ge condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Toshinori Numata; Toshifumi Irisawa; Koji Usuda; Naoharu Sugiyama; Tomohisa Mizuno; Shin-Ichi Takagi

  Semiconductor Science and Technology 22 (1) S93 - S98 0268-1242 2007/01
• Effects of ambient conditions in thermal treatment for Ge(001) surfaces on Ge-MIS interface properties

  Noriyuki Taoka; Keiji Ikeda; Yoshimi Yamashita; Naoharu Sugiyama; Shin-ichi Takagi

  SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 (1) S114 - S117 0268-1242 2007/01
• High performance 60 nm gate length germanium p-MOSFETs with Ni germanide metal source/drain

  Toyoji Yamamoto; Yoshimi Yamashita; Masatomi Harada; Noriyuki Taoka; Keiji Ikeda; Kunihiro Suzuki; Osamu Kiso; Naoharu Sugiyama; Shin-ichi Takagi

  2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 1041 - + 2380-9248 2007
• Fabrication of (110) GOI layers by Ge condensation of SiGe/ (110) SOI structures and application to pMOSFET devices

  S. Dissanayake; S. Sugahara; M. Takenaka; S. Takagi

  ICIIS 2007 - 2nd International Conference on Industrial and Information Systems 2007, Conference Proceedings 513 - 516 2007 [Refereed]
  
• The formation of SGOI structures with low dislocation density by a two-step oxidation and condensation method

  N. Sugiyama; S. Nakaharai; N. Hirashita; T. Tezuka; Y. Moriyama; K. Usuda; S. Takagi

  Semiconductor Science and Technology 22 (1) 0268-1242 2007/01
• Mobility-enhanced device technologies using SiGe/Ge MOS channels

  S. Takagi; T. Irisawa; T. Tezuka; S. Nakaliarai; T. Numata; N. Hirashita; Y. Moriyama; K. Usuda; S. Dissanayake; M. Tekenaka; S. Sugahara; N. Sugiyama

  ECS Transactions 11 (6) 61 - 74 1938-5862 2007
• Examination of additive mobility enhancements for uniaxial stress combined with biaxially strained Si, biaxially strained SiGe and Ge channel MOSFETs

  O. Weber; T. Irisawa; T. Numata; M. Harada; N. Taoka; Y. Yamashita; T. Yamamoto; N. Sugiyama; M. Takenaka; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 719 - 722 0163-1918 2007
• Low-temperature mobilities and energy loss rates of two-dimensional electrons in Si inversion layers

  Kyung Hwa Park; Kazuhiko Hirakawa; Shinichi Takagi

  PHYSICS OF SEMICONDUCTORS, PTS A AND B 893 601 - + 0094-243X 2007
• Carrier-transport-enhanced CMOS using new channel materials and structures

  Shinichi Takagi; Toshifiumi Irisawa; Tsutomu Tezuka; Shu Nakaharai; Koji Usuda; Norio Hirashita; Mitsuru Takenaka; Naoharu Sugiyama

  2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 464 - + 2007
• Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

  Shinichi Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Maeda; T. Numata; K. Ikeda; N. Sugiyama

  MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 135 (3) 250 - 255 0921-5107 2006/12
• High-performance uniaxially strained SiGe-on-insulator pMOSFETs fabricated by lateral-strain-relaxation technique

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Norio Hirashita; Naoharu Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 53 (11) 2809 - 2815 0018-9383 2006/11
• Sulfur passivation of Ge (001) surfaces and its effects on Schottky barrier contact

  Tatsuro Maeda; Shinichi Takagi; Tsuyoshi Ohnishi; Mikk Lippmaa

  MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 9 (4-5) 706 - 710 1369-8001 2006/08
• Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

  Tatsuro Maeda; Tetsuji Yasuda; Masayasu Nishizawa; Noriyuki Miyata; Yukinori Morita; Shinichi Takagi

  JOURNAL OF APPLIED PHYSICS 100 (1) 0021-8979 2006/07
• Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

  Tsutomu Tezuka; Yoshihiko Moriyama; Shu Nakaharai; Naoharu Sugiyama; Norio Hirashita; Eiji Toyoda; Yoshiji Miyamura; Shin-ichi Takagi

  Thin Solid Films 508 (1-2) 251 - 255 0040-6090 2006/06
• Characterization of platinum gerrnanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

  Keiji Ikeda; Tatsuro Maeda; Shin-ichi Takagi

  THIN SOLID FILMS 508 (1-2) 359 - 362 0040-6090 2006/06
• Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

  Tatsuro Maeda; Keiji Ikeda; Shu Nakaharai; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shinichi Takagi

  THIN SOLID FILMS 508 (1-2) 346 - 350 0040-6090 2006/06
• Performance enhancement of partially and fully depleted strained-SOI MOSFETs

  Toshinori Numata; Toshifumi Irisawa; Tsutomu Tezuka; Junji Koga; Norio Hirashita; Koji Usuda; Eiji Toyoda; Yoshiji Miyamura; Akihito Tanabe; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 53 (5) 1030 - 1038 0018-9383 2006/05
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

  Ishihara Takamitsu; Uchida Ken; Koga Junji; Takagi Shin-ichi

  Jpn J Appl Phys INSTITUTE OF PURE AND APPLIED PHYSICS 45 (4) 3125 - 3132 0021-4922 2006/04
• Effects of interfacial layers formed by plasma oxidation and nitridation on HfO2/Ge-MIS properties

  T. Maeda; Y. Morita; M. Nishizawa; S. Takagi

  ECS Transactions 3 (7) 551 - 558 1938-5862 2006 [Refereed]
  
• Electron transport properties of ultrathin-body and tri-gate SOI nMOSFETs with biaxial and uniaxial strain

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Naoharu Sugiyama; Shin-Ichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 0163-1918 2006
• Relationship between hole mobility and current drive enhancement in uniaxially strained thin-body SiGe-on-Insulator pMOSFETs

  Tsutomu Tezuka; Toshifumi Irisawa; Toshinori Numata; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Koji Usuda; Naoharu Sugiyama; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 146 - 147 0743-1562 2006
• Strain relaxation in strained-Si layer on SiGe-on-insulator substrate

  Norio Hirashita; Yoshihiko Moriyama; Eiji Toyoda; Naoharu Sugiyama; Shin-Ichi Takagi

  Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest IEEE Computer Society 2006 2006
• Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth

  Y. Moriyama; N. Hirashita; E. Toyoda; K. Usuda; S. Nakaharai; N. Sugiyama; S. Takagi

  ECS Transactions 3 (7) 1183 - 1190 1938-5862 2006 [Refereed]
  
• Generation of crystal defects in Ge-on-Insulator (GOI) layers in Ge-condensation process

  S. Nakaharai; T. Tezuka; N. Hirashita; E. Toyoda; Y. Moriyama; N. Sugiyama; S. Takagi

  Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest 2006 2006 [Refereed]
  
• Novel anisotropie strain engineering on (110)-surface SOI CMOS devices using combination of local/global strain techniques

  T. Mizuno; T. Irisawa; N. Hirashita; Y. Moriyama; T. Numata; T. Tezuka; N. Sugiyama; S. Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 0163-1918 2006
• Fabrication and electrical characterization of strained Si-on-insulator/Strained SiGe-on-insulator dual channel CMOS structures with high-mobility channels

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Naoharu Sugiyama; Tomohisa Mizuno; Shinichi Takagi

  IEEJ Transactions on Electronics, Information and Systems 126 (11) 1332 - 1338 0385-4221 2006
• Mobility-enhanced CMOS technologies using strained Si/SiGe/Ge channels

  S. Takagi; T. Tezuka; T. Irisawa; S. Nakaharai; T. Numata; K. Usuda; T. Maeda; N. Sugiyama

  2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 2006
• Ge condensation technologies for advanced MOSFETs on SGOI and GOI substrates

  N. Sugiyama; T. Tezuka; T. Irisawa; K. Usuda; Y. Moriyama; S. Nakaharai; N. Hirashita; S. Takagi

  ECS Transactions 3 (7) 1015 - 1022 1938-5862 2006
• High performance CMOS device technologies in nano CMOS era

  Shinichi Takagi

  IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS 86 - 87 2006
• Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

  Koji Usuda; Toshinori Numata; Toshifumi Irisawa; Norio Hirashita; Shinichi Takagi

  Materials Science and Engineering B: Solid-State Materials for Advanced Technology 124-125 (SUPPL.) 143 - 147 0921-5107 2005/12
• On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

  Toshifumi Irisawa; Toshinori Numata; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 52 (5) 993 - 998 0018-9383 2005/05
• Sub-band structure engineering for advanced CMOS channels

  S Takagi; T Mizuno; T Tezuka; N Sugiyama; S Nakaharai; T Numata; J Koga; K Uchida

  SOLID-STATE ELECTRONICS 49 (5) 684 - 694 0038-1101 2005/05 [Refereed]
  
• High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Naoharu Sugiyama; Shin-Ichi Takagi

  IEEE Electron Device Letters 26 (4) 243 - 245 0741-3106 2005/04
• High-performance (1 1 0)-surface strained-SOI MOSFETs

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  Materials Science in Semiconductor Processing 8 (1-3 SPEC. ISS.) 327 - 336 1369-8001 2005/02
• High mobility Ge-on-Insulator p-channel MOSFETs using Pt Germanide Schottky source/drain

  Tatsuro Maeda; Keiji Ikeda; Shu Nakaharai; Tsutomu Tezuka; Naoham Sugiyama; Yoshihiko Moriyama; Shinichi Takagi

  IEEE Electron Device Letters 26 (2) 102 - 104 0741-3106 2005/02
• High performance multi-gate pMOSFETs using uniaxially-strained SGOI channels

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Shu Nakaharai; Norio Hirashita; Naoharu Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  Technical Digest - International Electron Devices Meeting, IEDM 2005 709 - 712 0163-1918 2005
• High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique

  Toshifumi Irisawa; Toshinori Numata; Tsutomu Tezuka; Koji Usuda; Norio Hirashita; Naonaru Sugiyama; Eiji Toyoda; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2005 178 - 179 0743-1562 2005
• A new strained-SOI/GOI dual CMOS technology based on local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Eiji Toyoda; Naoharu Sugiyama; Tomohisa Mizuno; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 2005 80 - 81 0743-1562 2005
• Local strain evaluation of strained-SOI structures

  Koji Usuda; Tomohisa Mizuno; Toshinori Numata; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Shinku/Journal of the Vacuum Society of Japan Vacuum Society of Japan 48 (1) 18 - 22 0559-8516 2005
• (110)-Surface strained-SOI CMOS devices

  Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers Inc. 52 (3) 367 - 374 0018-9383 2005
• High-speed source-heterojunction-MOS-transistor (SHOT) utilizing high-velocity electron injection

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Moriyama, Y.; Nakaharai, S.; Maeda, T.; Takagi, S.

  Ieee Transactions on Electron Devices 52 (12) 2690 - 2696 0018-9383 2005 [Refereed]
  
• Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

  T Maeda; T Yasuda; M Nishizawa; N Miyata; Y Morita; S Takagi

  APPLIED PHYSICS LETTERS 85 (15) 3181 - 3183 0003-6951 2004/10 [Refereed]
  
• Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

  Shin-Ichi Takagi; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Toshinori Numata; Koji Usuda; Yoshihiko Moriyama; Shu Nakaharai; Junji Koga; Akihito Tanabe; Tatsuro Maeda

  Applied Surface Science Elsevier 224 (1-4) 241 - 247 0169-4332 2004/03
• Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

  Koji Usuda; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Applied Surface Science Elsevier 224 (1-4) 113 - 116 0169-4332 2004/03
• Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates

  N. Sugiyama; Y. Moriyama; S. Nakaharai; T. Tezuka; T. Mizuno; S. Takagi

  Applied Surface Science 224 (1-4) 188 - 192 0169-4332 2004/03 [Refereed]
  
• Thin-film strained-SOI CMOS devices - Physical mechanisms for reduction of carrier mobility

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Numata, T.; Maeda, T.; Takagi, S.

  Ieee Transactions on Electron Devices 51 (7) 1114 - 1121 0018-9383 2004 [Refereed]
  
• Selectively-formed high mobility SiGe-on-insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique

  Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Naoharu Sugiyama; Shin-Ichi Takagi

  Digest of Technical Papers - Symposium on VLSI Technology Institute of Electrical and Electronics Engineers Inc. 198 - 199 0743-1562 2004
• Effect of growth temperature on lattice relaxation during SiGe growth on Si substrate

  Y. Moriyama; N. Sugiyama; N. Hirashita; S. Nakaharai; S. Takagi

  Proceedings - Electrochemical Society 7 849 - 856 2004 [Refereed]
  
• Device characterizations and physical models of strained-Si channel CMOS

  Takagi, S.; Maeda, T.; Numata, I.; Mizuno, T.; Usuda, K.; Tanabe, A.; Tezuka, T.; Nakaharai, S.; Koga, J.; Irisawa, T.; Moriyama, Y.; Hirashita, N.; Sugiyama, N.; ieee,

  ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES 133 - 138 2004 [Refereed]
  
• SiGe-on-Insulator and Ge-on-Insulator substrates fabricated by Ge-condensation technique for high-mobility channel CMOS devices

  Tezuka, T.; Mizuno, T.; Sugiyama, N.; Nakaharai, S.; Moriyama, Y.; Usuda, K.; Numata, T.; Hirashita, N.; Maeda, T.; Takagi, S.; Miyamura, Y.; Toyoda, E.

  High-Mobility Group-Iv Materials and Devices 809 65 - 75 0272-9172 2004 [Refereed]
  
• High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structures

  T. Mizuno; N. Sugiyama; T. Tezuka; Y. Moriyama; S. Nakaharai; T. Maeda; S. Takagi

  Digest of Technical Papers - Symposium on VLSI Technology 202 - 203 0743-1562 2004
• Formation mechanism of Ge-on-Insulator layers by Ge-condensation technique

  S. Nakaharai; T. Tezuka; N. Sugiyama; S. Takagi

  Proceedings - Electrochemical Society 7 741 - 748 2004
• Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

  N. Hirashita; T. Numata; T. Tezuka; N. Sugiyama; K. Usuda; T. Irisawa; A. Tanabe; Y. Moriyama; S. Nakaharai; S. Takagi; E. Toyoda; Y. Miyamura

  Proceedings - IEEE International SOI Conference 141 - 142 1078-621X 2004
• Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

  Shu Nakaharai; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shin-Ichi Takagi

  Applied Physics Letters 83 (17) 3516 - 3518 0003-6951 2003/10
• Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

  K Uchida; S Takagi

  APPLIED PHYSICS LETTERS 82 (17) 2916 - 2918 0003-6951 2003/04 [Refereed]
  
• High-performance strained-soi cmos devices using thin film sige-on-insulator technology

  Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Toshinori Numata; Shin-Ichi Takagi

  IEEE Transactions on Electron Devices 50 (4) 988 - 994 0018-9383 2003
• Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

  Koji Usuda; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shu Nakaharai; Shin-Ichi Takagi

  Materials Research Society Symposium - Proceedings 738 317 - 322 0272-9172 2003
• Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and delta T-SOI-induced scattering

  K Uchida; J Koga; S Takagi

  2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 805 - 808 2003 [Refereed]
  
• Formation of Strained Si / SiGe on Insulator Structure with a (110) Surface

  N. Sugiyama; T. Mizuno; Y. Moriyama; S. Nakaharai; T. Tezuka; S. Takagi

  IEEE International SOI Conference 130 - 131 2003 [Refereed]
  
• Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD)

  Koji Usuda; T. Numata; T. Tezuka; N. Sugiyama; Y. Moriyama; S. Nakaharai; S. Takagi

  IEEE International SOI Conference 138 - 139 2003
• Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

  K Uchida; J Koga; R Ohba; S Takagi; A Toriumi

  JOURNAL OF APPLIED PHYSICS 90 (7) 3551 - 3557 0021-8979 2001/10 [Refereed]
  
• Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

  Ken Uchida; Junji Koga; Ryuji Ohba; Toshinori Numata; Shin-ichi Takagi

  Technical Digest - International Electron Devices Meeting 633 - 636 0163-1918 2001
• Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors

  K Uchida; K Matsuzawa; J Koga; S Takagi; A Toriumi

  APPLIED PHYSICS LETTERS 76 (26) 3992 - 3994 0003-6951 2000/06 [Refereed]
  
• Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits.

  Uchida Ken; Matsuzawa Kazuya; Koga Junji; Ohba Ryuji; Takagi Shin-ichi; Toriumi Akira

  Japanese Journal of Applied Physics The Japan Society of Applied Physics 39 (4) 2321 - 2324 0021-4922 2000
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi2Ta2O9 Films and Ultra-Thin SiN Buffer Layers.

  Yamaguchi Takeshi; Koyama Masato; Takashima Akira; Takagi Shin-ichi

  Japanese Journal of Applied Physics The Japan Society of Applied Physics 39 (4) 2058 - 2062 0021-4922 2000
• High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology

  Mizuno T; Takagi S; Sugiyama N; Koga J; Tezuka T; Usuda K; Hatakeyama T; Kurobe A; Toriumi A

  Technical Digest - International Electron Devices Meeting 934 - 936 1999 [Refereed]
  
• Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

  K. Uchida; J. Koga; R. Ohba; S. Takagi; A. Toriumi

  Annual Device Research Conference Digest IEEE 138 - 139 1999
• Interface Analysis of Al2O3/InP Structure Prepared by Molecular Beam Deposition

  Ohyama Hideaki; Narusawa Tadashi; Nakashima Hisao; Takagi Shin-ichi; Sugano Takuo

  Jpn J Appl Phys The Japan Society of Applied Physics 26 (10) 1615 - 1621 0021-4922 1987/10

MISC

• Mobility enhancement techniques for Ge and GeSn MOSFETs

  Ran Cheng; Zhuo Chen; Sicong Yuan; Mitsuru Takenaka; Shinichi Takagi; Genquan Han; Rui Zhang  Journal of Semiconductors  42-  (2)  2021/02
• Ultrathin-Body Ge-on-Insulator Mosfet and TFET Technologies

  Takagi Shinichi; Kim Wu-Kang; Jo Kwang-Won; Matsumura Ryo; Takaguchi Ryotaro; Katoh Takumi; Bae Tae-Eon; Kato Kimihiko; Takenaka Mitsuru  Meeting Abstracts  86-  (31)  1042  -86  2018  [Refereed]
  
• Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment

  Kato Kimihiko; Matsui Hiroaki; Tabata Hitoshi; Mitsuru Takenaka; Shinichi Takagi  Procedding of the 2017 IEEE International Electron Devices Meeting (IEDM)  15.6.1  -15.6.4  2018/01  [Refereed]
  
• III-V/Ge-based tunneling MOSFET

  Takagi S; Ahn D-H; Gotow T; Nishi K; Bae T-E; Katoh T; Matsumura R; Takaguchi R; Kato K; Takenaka M  Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S), 2017 Fifth Berkeley Symposium on  1  2017  [Refereed]
  
• Ge MOS Device Technologies for Ultra Low Power LSIs

  高木 信一; 玉 虓; 張 睿; 柯 夢南; 竹中 充  半導体・集積回路技術シンポジウム講演論文集 = Proceedings of Symposium on Semiconductors and Integrated Circuits Technology  80-  53  -56  2016/08
• CI-4-3 InGaAs Planer-type Tunneling MOSFETs with Zn-diffused source regions

  Takagi Shinichi; Noguchi Munetaka; Takenaka Mitsuru  Proceedings of the IEICE General Conference  2015-  (2)  "SS  -92"-"SS-93"  2015/02
• Invited : High I[on]/I[off] Ge-source Ultrathin Body Strained-SOI Tunnel FETs : Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties

  KIM Minsoo; WAKABAYASHI Yuki K.; NAKANE Ryosho; YOKOYAMA Masafumi; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. SDM  114-  (421)  9  -12  2015/01
• Thermal Resistance Improvement and Low-resistance Lateral PIN Junction Formation Technique on III-V-OI Wafers

  IKKU Yuki; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. OPE  114-  (377)  37  -40  2014/12
• Thermal Resistance Improvement and Low-resistance Lateral PIN Junction Formation Technique on III-V-OI Wafers

  IKKU Yuki; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. LQE  114-  (378)  37  -40  2014/12
• Small, low-crosstalk optical switches using III-V CMOS photonics platform

  IKKU Yuki; YOKOYAMA Masafumi; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. LQE  114-  (98)  39  -42  2014/06
• Platform Technology for Electric-Photonic Integrated Circuits by III-V CMOS Photonics

  TAKENAKA Mitsuru; IKKU Yuki; CHEN Yongpeng; KIM Sang-Hyeon; TAKAGI Shinichi  The transactions of the Institute of Electronics, Information and Communication Engineers. C  97-  (3)  95  -103  2014/03
• High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and Vth Tunability

  Kim S. H.; Nakane R.; Ichikawa O.; Osada T.; Hata M.; Takenaka M.; Takagi S.  Technical report of IEICE. SDM  113-  (420)  39  -42  2014/01
• 招待講演 Ⅲ-Ⅴ/Ge CMOSフォトニクス実現に向けたデバイス技術

  竹中 充; 高木 信一  半導体・集積回路技術シンポジウム講演論文集 = Proceedings of Symposium on Semiconductors and Integrated Circuits Technology  77-  19  -22  2013/07
• Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

  CHANG Chih-yu; YOKOYAMA Masafumi; KIM Sang-hyeon; ICHIKAWA Osamu; OSADA Takenori; HATA Masahiko; TAKENAKA Mitsuru; TAKAGI Shinichi  Technical report of IEICE. SDM  113-  (87)  33  -37  2013/06
• III-V/Ge device technologies for electronic-photonic integrated circuits on the Si platform

  TAKENAKA Mitsuru; TAKAGI Shinichi  應用物理  82-  (4)  309  -312  2013/04
• C-3-52 InGaAsP Photonic-wire Optical Switches using fil-V CMOS Photonics Platform

  Ikku Yuki; Yokoyama Masafumi; Ichikawa Osamu; Hata Masahiko; Takenakai Mitsuru; Takagi Shinichi  Proceedings of the IEICE General Conference  2013-  (1)  212  -212  2013/03
• C-3-16 III-V CMOS Photonics Platform toward Optical Interconnection

  Takenaka Mitsuru; Ikku Yuki; Kim Sang-Hyeon; Yokoyama Masafumi; Takagi Shinichi  Proceedings of the IEICE General Conference  2013-  (1)  176  -176  2013/03
• InGaAs MOS Gate Stack Formation and the MOS Interface Properties

  TAKAGI Shinichi; TAOKA Noriyuki; SUZUKI Rena; YOKOYAMA Masafumi; KIM Sang-Hyeon; TAKENAKA Mitsuru  表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan  33-  (11)  628  -633  2012/11
• Recent Trend of High Mobility Channel MOS Transistor Technologies

  TAKAGI Shinichi; TAKENAKA Mitsuru  The Journal of the Institute of Electronics, Information, and Communication Engineers  95-  (11)  969  -973  2012/11
• C-4-18 III-V CMOS Photonics Platform for High-performance Electronic-Photonic Integrated Circuit

  Takenaka Mitsuru; Ikku Yuki; Kim Sang-Hyeon; Yokoyama Masafumi; Takagi Shinichi  Proceedings of the Society Conference of IEICE  2012-  (1)  228  -228  2012/08
• Present Status and Future Prospect on ULSIs and Related Semiconductor Materials

  泰 雅彦; 高木 信一; 竹中 充  住友化学 : 技術誌  2011-  (2)  37  -53  2011/11
• New Channel Material CMOS on Si Platform

  TAKAGI Shinichi; TAKENAKA Mitsuru  The Journal of the Institute of Electronics, Information and Communication Engineers  93-  (11)  904  -908  2010/11
• III-V/Ge CMOS technologies and heterogeneous integrations on Si platform

  TAKAGI Shinichi; TAKENAKA Mitsuru  IEICE technical report  110-  (109)  119  -124  2010/06
• Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces

  YASUDA Tetsuji; MIYATA Noriyuki; URABE Yuji; ISHII Hiroyuki; ITATANI Taro; MAEDA Tatsuro; YAMADA Hisashi; FUKUHARA Noboru; HATA Masahiko; OHTAKE Akihiro; HOSHII Takuya; YOKOYAMA Masafumi; TAKENAKA Mitsuru; TAKAGI Shinichi  IEICE technical report  110-  (90)  49  -54  2010/06
• CT-2-2 III-V MOS Transistors on Si substrates

  Takagi Shinichi; Sugiyama Masakazu; Takenaka Mitsuru  Proceedings of the IEICE General Conference  2010-  (2)  "SS  -41"-"SS-42"  2010/03
• Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

  Toshifumi Irisawa; Kimitoshi Okano; Takuya Horiuchi; Hiroshi Itokawa; Ichiro Mizushima; Koji Usuda; Tsutomu Tezuka; Naoharu Sugiyama; Shin-ichi Takagi  IEEE TRANSACTIONS ON ELECTRON DEVICES  56-  (8)  1651  -1658  2009/08
• Comprehensive Understanding of Surface Roughness Limited Mobility in Unstrained- and Strained-Si MOSFETs by High Resolution TEM Measurements and Novel Characterization Scheme of Si/SiO_2 Interface Roughness

  ZHAO Y.; MATSUMOTO H.; SATO T.; KOYAMA S.; TAKENAKA M.; TAKAGI S.  半導体・集積回路技術シンポジウム講演論文集  73-  101  -104  2009/07
• MOVPE装置を用いたAs気相ドーピングによるGe p-n接合の電気特性

  森井清仁; 中根了昌; 杉山正和; 中野義昭; 竹中充; 竹中充; 高木信一  応用物理学関係連合講演会講演予稿集  56th-  (2)  2009
• 微小領域選択MOVPEにより作製したSi(111)面上InGaAsの構造解析

  杉山正和; 出浦桃子; 星井拓也; 山本剛久; 幾原雄一; 田尻寛男; 坂田修身; 木村滋; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭  応用物理学関係連合講演会講演予稿集  55th-  (1)  2008
• 微小領域選択成長によるSi(111)基板上へのInAsピラーの形成

  星井拓也; 出浦桃子; 杉山正和; 中根了昌; 菅原聡; 竹中充; 中野義昭; 高木信一  応用物理学関係連合講演会講演予稿集  55th-  (1)  2008
• 微小領域選択MOVPEにおけるSi上InGaAsの横方向成長に対するGa組成の影響

  出浦桃子; 星井拓也; 杉山正和; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭  応用物理学関係連合講演会講演予稿集  55th-  (1)  2008
• Gate dielectric formation and MIS interface characterization on Ge

  S. Takagi; T. Maeda; N. Taoka; M. Nishizawa; Y. Morita; K. Ikeda; Y. Yamashita; M. Nishikawa; H. Kumagai; R. Nakane; S. Sugahara; N. Sugiyama  MICROELECTRONIC ENGINEERING  84-  (9-10)  2314  -2319  2007/09  [Refereed]
  
• 微小孔を介したSi基板上InGaAs成長におけるモフォロジー向上

  星井拓也; 出浦桃子; 杉山正和; 中根了昌; 菅原聡; 竹中充; 中野義昭; 高木信一; 高木信一  応用物理学会学術講演会講演予稿集  68th-  (1)  2007
• Si上III/V族化合物半導体の選択MOVPEにおける初期核発生過程の観察と制御

  出浦桃子; 杉山正和; 星井拓也; 中根了昌; 竹中充; 菅原聡; 高木信一; 中野義昭  応用物理学会学術講演会講演予稿集  68th-  (1)  2007
• Fully-Depleted SOI CMOS circuits and technology: For ultralow-power applications

  Takayasu Sakurai; Akira Matsuzawa; Takakuni Douseki; Hideaki Matsuhashi; Toshiaki Tsuchiya; Yasuhisa Omura; Hiroshi Shimomura; Masashi Yonemaru; Koji Fujii; Atsushi Kameyama; Hiroshi Kawaguchi; Tsuneo Tsukahara; Minoru Kozaki; Masayoshi Kinoshita; Akihiro Sawada; Yasuyuki Matsuya; Jun Terada; Yoshitsugu Inagaki; Tsuneaki Fuse; Yusuke Ohtomo; Hiroshi Koizumi; Shunsuke Baba; Kazuyoshi Nishimura; Yoshifumi Yoshida; Norio Hama; Tohru Mogami; Toshiro Hiramoto; Ken Uchida; Shin-Ichi Takagi; Toshinori Numata  Fully-Depleted SOI CMOS Circuits and Technology: For Ultralow-Power Applications  1  -411  2006
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs

  ISHIHARA Takamitsu; UCHIDA Ken; KOGA Junji; TAKAGI Shin-ichi  Extended abstracts of the ... Conference on Solid State Devices and Materials  2005-  42  -43  2005/09
• Strained SOI technology for high-performance, low-power CMOS applications

  Takagi, S.; Mizuno, T.; Tezuka, T.; Sugiyama, N.; Numata, T.; Usuda, K.; Moriyama, Y.; Nakaharai, S.; Koga, J.; Tanabe, A.; Maeda, T.; Ieee, Ieee  2003 Ieee International Solid-State Circuits Conference: Digest of Technical Papers  46-  376  -+  2003  [Refereed]
  
• 量子閉じ込め効果が薄膜SOI MOSFETの電気特性に与える影響について

  内田 建; 古賀 淳二; 大場 竜二; 沼田 敏典; 高木 信一  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス  101-  (573)  89  -94  2002/01
• Design for scaled thin film strained-SOI CMOS devices with higher carrier mobility

  Mizuno, T.; Sugiyama, N.; Tezuka, T.; Numata, T.; Maeda, T.; Takagi, S.; Electronic Devices Society Of Ieee; Electronic Devices Society Of, Ieee  INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST  31-34-  31  -34  2002  [Refereed]
  

Research Grants & Projects

• Understanding carrier transport properties of ultra-thin semiconductor channel CMOS and establishing a method to enhance channel mobility

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2022/04 -2025/03 

  Author : 高木 信一
• Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transfer

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2017/05 -2022/03 

  Author : Takagi Shinichi
• スティープスロープＭＯＳトランジスタに最適なＭＯＳゲートスタック構造に関する研究

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2016/10 -2019/03 

  Author : 高木 信一; HUANG PO-CHIN
• 3次元集積Ge/III-V CMOSに向けた素子技術基盤の構築

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2017/04 -2018/03 

  Author : 高木 信一
• Understanding of carrier transport properties of Ge-On-Insulator CMOS and establishment of performance enhancement engineering

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2014/04 -2017/03 

  Author : Takagi Shinichi; TAKENAKA Mitsuru
• 高移動度チャネルＭＯＳＦＥＴのキャリア輸送と素子構造に関する理論的研究

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2012/04 -2015/03 

  Author : 高木 信一; ALAM Khairul; KHAIRUL Alam
• Understanding of carrier transport mechanism in Ge MOS interfaces and establishment of mobility enhancement technologies

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2011/04 -2014/03 

  Author : TAKAGI Shinichi; TAKENAKA Mitsuru
• Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2010 -2013 

  Author : ZAIMA Shigeaki; TAKENAKA Mitsuru; SAKASHITA Mitsuo; TANAKA Nobuo; TAKEUCHI Wakana; NAKATSUKA Osamu; TAKAGI Shinichi
• Understanding of mechanisms dominating inversion-layer mobility in strained-Si MOSFETs and establishment of guideline for the mobility enhancement

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2008 -2010 

  Author : TAKAGI Shinichi; MITSURU Takenaka
• Technology Evolution for Silicon Nano-Electronics

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2006 -2010 

  Author : ZAIMA Shigeaki; HORI Masaru; TAKAGI Shinichi; MASU Kazuya; MIYAZAKI Seiichi; HIRAMOTO Toshiro; TABATA Hitoshi
• 高移動度チャネル材料MOSFETのMOS界面とキャリア輸送特性に関する研究

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2008 -2009 

  Author : 高木 信一; ZHAO Yi
• Nano-structure functional devices based Ge-based channels

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2006 -2009 

  Author : TAKAGI Shinichi; SUGAHARA Satoshi; TAKENAKA Mitsuru
• Si系新チャネル材料MOSトランジスタにおけるキャリア輸送特性の研究

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2006 -2007 

  Author : 高木 信一; OLIVIER Weber
• Study on physical models for understanding the properties of strained-Si MOS Transistors

  Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research

  Date (from‐to) : 2004 -2006 

  Author : TAKAGI Shinichi
• シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー

  日本学術振興会：科学研究費助成事業

  Date (from‐to) : 2005 -2005 

  Author : 財満 鎭明; 高木 信一; 宮崎 誠一; 堀 勝; 益 一哉; 田畑 仁